国家/地区 德国（11）
IPC部 B（11）
IPC大类 B82（11）
IPC小类 B82B（11）
IPC B82B003/00（11）
发明人 CHANDRA B（2） TULEVSKI G S（2）
公开年 2013（4）
申请年 2011（2）  2012（2）  2013（2） 
专利权人 CHANDRA B（2） INT BUSINESS.（2） TULEVSKI G S（2）

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Production device used for producing carbon nano material e.g. graphene nano material, has carbon nano control device that is arranged on carbon nano-vacuum device such that carbon nano-vacuum device is controlled.

HO T, HO T K, HE Z

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Providing graphene comprises providing transfer material, synthesizing graphene at first temperature, cooling the synthesized graphene from first temperature to a second temperature, and detaching graphene from transfer material.

HUBRICH C, GLANZ C, KOLARIC I

Nanocomposite for adjusting conductivity of insulating material and as insulation material for transformer, comprises electric field gradient nanoparticles distributed in electrically insulating material and has partial regions of graphene.

BAKIJA B, HAMMER T, HEINRICHSDORFF F, KRUEGER U, LUETHEN V

Doping cerium(IV) salt with carbon material comprising carbon nanotubes or graphene, useful for producing a manufacturing article, comprises dissolving cerium(IV) salt, which include e.g. cerium(IV) salt of nitric acid with carbon material.

AFZALIARDAKANI A, CHANDRA B, TULEVSKI G S, AFZALIARAKANI A

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Manufacture of graphene nano tape for electronic circuit, involves heating precursor material in vacuum in presence of anisotropic metal having specified surface redox potential.

ZHONG D, CHI L, ZACHARIAS H, FUCHS H, MUELLEN K, FENG X, MULLEN K, CHII1 4 L

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T