国家/地区 韩国（14）
IPC部 C（14）
IPC大类 C01（14）
IPC小类 C01B（14）
IPC C01B032/188（14）
发明人 SHIN H（3） SHIN H J（3） BYUN K（2）
BYUN K E（2） LEE C（2） LEE C S（2）
SHIN K（2） SHIN K W（2） VEERASAMY V（2）
VEERASAMY V S（2）
公开年 2011（4） 2015（3） 2018（2） 2021（2）
申请年 2011（3）  2009（2）  2020（2） 
专利权人 SAMSUNG ELEC.（3） GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）
UNIV SUNGKYU.（2）

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Graphene sheet useful for electronic device comprising a channel layer, a source electrode and a drain electrode, a gate insulating layer and a gate electrode, comprises graphene layers.

PARK K B, JIN H B, JUNG S C, KWON S Y

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Three-dimensional graphene structure useful as next-generation material for electronic device e.g. display device and transparent electrode for solar cell comprises a layer of graphene having periodically repeated three-dimensional shape.

SHIN H, CHOI J, PARK J, AHN J, AHN J R, CHOI J Y, PARK J H, SHIN H J