国家/地区 中国（15） 韩国（4） 美国（4） 世界知识产权组织（2）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C01B031/04（17）
发明人 JIN C（17）
公开年 2014（10） 2015（4）
申请年 2014（12）  2015（2） 
专利权人 SUZHOU SIDIK.（7） SUZHOU SDIK .（6） SUZHOU SDIK .（3） KOREA INST E.（2）
NINGBO CARL .（2） UNIV KYUNGHE.（2） UNIV KYUNGHE.（2） UNIV NINGBO .（2）

Making graphene composite used to make active material for supercapacitor, involves radiating microwave on graphite oxide-conducting agent mixture, dispersing formed material in liquid and ultrasonic-wave pulverizing, and freeze-drying.

YEON S, JEON M, SHIN K, JIN C, LEE B, PARK S, KIM D, LEE S H, YEON S H, JIN C S, JEON M S, LEE B S, SHIN K H, PARK S K, KIM D H

Tunneling diode used for diode-based optoelectronic device, consists of silicon quantum dot layer formed on silicon oxide thin film, doped layer having structure having graphene-silicon quantum dot hybrid structure, and electrode.

CHOI S H, SHIN D H, KIM S, SUK H C, DONG H S, SUNG K, CHIO S, SHIN D, JIN C

Photodiode useful in optoelectronic device, comprises e.g. a silicon quantum dot layer containing silicon quantum dots formed on silicon oxide thin film and a graphene-silicon quantum dot hybrid structure formed on silicon quantum dot layer.

SUK H C, DONG H S, SUNG K, CHOI S H, SHIN D H, KIM S, CHIO S, SHIN D, JIN C, DONGHEE S, SHIGAO C, SUNGKIM

Synthesis of visible light reduced insoluble graphene, involves stirring expanded graphite, sodium persulfate, sodium vanadate, phosphotungstic acid and deionized water, vacuum filtering, washing, drying, reducing, and filtering.

JIN C, LI T, WANG S, MAO X, WANG K, YE C, PENG G

Synthesis of visible light reduced soluble graphene composite material, involves stirring expanded graphite, sodium persulfate, sodium vanadate, phosphomolybdic acid and deionized water, , washing, oxidizing and reducing.

JIN C, LI T, WANG S, MAO X, WANG K, YE C, PENG G

Producing graphene, useful e.g. in secondary cell electrode comprises e.g. performing thermochemical reaction of crystalline carbide compound and halogen element-containing gas, and performing acid treatment, and reduction reaction.

YEON S H, SHIN K H, JIN C S, JUNG K N, JEON J D, SHIM J, YANG J H, LEE B S, JEON M S, WOOK A, YEON S, SHIN K, JIN C, JUNG K, JEON J, YANG J, LEE B, AHN W

Non-invasive transfer-preparation of graphene by chemical vapor deposition, comprises growing graphene films on metal substrate and dispensing organic solvent coatings comprising polymethyl methacrylate on surface of graphene film.

JIN C, YANG X

Preparation of large-area graphene intermediate involves cutting holes in substrate, heating in reaction chamber, annealing, growing graphene film, scrapping metal substrate graphene side, forming adhesive layer and etching substrate.

JIN C, YANG X

Preparing graphene by chemical vapor deposition comprises depositing copper-nickel alloy thin film on monocrystalline silicon substrate surface, heating the substrate, cooling, and removing the graphene thin film grown on the substrate.

JIN C, YANG X

Preparation of graphene involves cleaning copper alloy, drying, placing copper alloy chemical vapor deposition device, maintaining temperature and pressure, introducing hydrogen gas and helium gas, and discharging.

JIN C, YANG X