国家/地区 中国（28）
IPC部 C（28）
IPC大类 C01（28）
IPC小类 C01B（28） C23C（28） H01L（8）
B01D（2） B22F（2） B32B（2）
C01G（2） H01J（2） H01M（2）
IPC C23C016/26（28）
发明人 WANG X（4） LIU Z（3） CAO F（2）
HUANG S（2） LI Y（2） NARKEVICIUTE I（2）
PENG H（2） VARADARAJAN B N（2） WANG K（2）
YANG H（2）
公开年 2021（28）
申请年 2021（15）  2020（11）  2019（2） 
专利权人 BEIJING GRAP.（3） UNIV PEKING（3） LAM RES CORP（2） NINGBO INST .（2）
UNIV SINGAPO.（2）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Graphene composite film comprises graphene composite film main body comprising carbon nano-tube film substrate, and copper substrate.

MAO J

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Industrial mass production of vertical graphene composite carbon felt involves soaking carbon felt in acid solution, vibrating, repeatedly washing soaked carbon felt with deionized water, drying, and putting carbon felt on roller device.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A