国家/地区 中国（12）
IPC部 C（12） H（7） B（3）
IPC大类 C23（12）
IPC小类 C23C（12） H01L（5） C01B（3）
B22F（2） C25D（2）
IPC C23C014/24（12）
发明人 DU X（2） HAO M（2） LI C（2）
LI M（2） WANG H（2）
公开年 2021（9） 2022（3）
申请年 2021（12）
专利权人 LIAONING FEN.（2）

Diode for semiconductors, has heterojunction device with vertical structure, which is indium tin oxide substrate, gallium oxide film, graphene film and aluminum electrode layer, from bottom to top.

XIANG J, JIA M, HAN T, TANG L

Preparing petal-shaped graphene field emission cold cathode, comprises selecting and cleaning substrate, selecting silicon sheet and copper foil copper foil as substrate, and growing layer of copper film on substrate surface.

ZHANG X, LEI W, ZHAO Z, ZHAO N

Winding type device for preparing graphene composite film, has pattern generating roller that partially removes wet film layer which is not formed on flexible base film through negative pressure absorption.

LI C, DU X, HAO M

Preparation of graphene/metal organic frame composite photo-responsive device involves preparing silica/silicon flakes with reduced graphene oxide on surface, evaporating electrode, and preparing metal organic framework.

GUO X, JI D, XU W, GAO G, CAO L, FANG X

Winding type device useful for preparation of graphene composite film, comprises pattern generating roller by vacuum absorbing wet film layer i.e. not formed on flexible base film of pattern generating roller i.e. partially removed to form specific pattern on graphene composite film.

LI C, DU X, HAO M

Organic LED (OLED) evaporation mask plate, has mask plate upper plate movably buckled on mask plate lower plate and provided with fine adjusting lifting mechanism and opening of mounting cavity layer is provided with sealing mechanism.

LUO X, WANG H

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Preparing carbon-based device comprises e.g. transferring multilayer graphene film synthesized by chemical vapor deposition, and placing analytical pure liquid bromine together with transferred multilayer graphene or graphite film.

YU X, TIAN Z, LI M, YU D, REN Z, REN L, FU Y

Preparation of graphene copper-based reinforced thermal conductive film involves pre-treating foamed copper powder, chemically depositing with graphene, mixing with foamed graphene powder, and adding graphene/pure copper mixed powder.

JIA T, HONG W, ZHOU R, XI X, YANG F, LI M