国家/地区 美国（30） 中国（17） 韩国（16） 世界知识产权组织（15） 欧洲专利局（EPO）（13） 日本（13） 台湾（7） 英国（3） 德国（2） 法国（2）
IPC部 C（42）
IPC大类 C01（42）
IPC小类 C01B（42）
IPC C01B032/184（42）
发明人 CHOI J（2） GLASS H（2） GUINEY I（2）
INGLE N K（2） MALLICK A B（2） SINGHA R S（2）
THOMAS S（2） TYLER M（2） WALLIS R（2）
WANG J（2） WHANG D（2） WHANG D M（2）
YAMAGUCHI J（2） ZENASNI A（2）
公开年 2021（9） 2018（8） 2022（4） 2013（3） 2017（3） 2023（3） 2012（2） 2014（2） 2016（2） 2019（2）
申请年 2018（5）  2020（5）  2021（5）  2022（5）  2017（4）  2011（3）  2015（3）  2016（3）  2019（3）  2012（2）  2013（2） 
专利权人 FUJITSU LTD（3） SAMSUNG ELEC.（3） APPLIED MATE.（2） COMMISSARIAT.（2）
KOREA INST S.（2） PARAGRAF LTD（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Device for producing graphene layer, has one electrode which is connected to positive pole of voltage source, and other electrode that is connected to negative pole and is provided for carbon ions accumulate in graphene attachment region so as to form graphene layer.

KREISCHER U

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Lithium or sodium-based battery used for e.g. portable electronic device, comprises anode at least partially covered on its side facing electrolyte by at least one artificial solid-electrolyte interphase layer with layer(s) of porous graphene with pores having preset average characteristic width.

CHOI K, HEIGHT M J

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Preparing reduced graphene film used as active material for energy storage, preferably lithium-ion battery, involves using polyvinyl alcohol as additive, reducing graphene oxide with metal, and forming layer of graphene film on metal surface.

ZHANG S, LI T, ZHAO H, LI C, WANG R

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S