国家/地区 美国（43）
IPC部 B（43）
IPC大类 B01（43）
IPC小类 B01J（43）
IPC C23C016/26（43）
发明人 HONG B H（5） CHOI J（3） CHOI J Y（3）
HONG B（3） MATSUMOTO T（3） SHIN H（3）
SHIN H J（3） YOON J（3） BEDWORTH P V（2）
CHA S W（2） HEISE S E（2） HONG S Y（2）
IFUKU R（2） JUNG M（2） JUNG M H（2）
公开年 2012（7） 2013（6） 2014（6） 2016（6） 2018（4） 2011（3） 2015（2） 2017（2） 2021（2） 2022（2）
申请年 2012（10）  2016（6）  2013（4）  2014（4）  2010（3）  2011（3）  2015（3）  2017（3）  2018（2）  2021（2） 
专利权人 SAMSUNG ELEC.（6） HANWHA TECHW.（5） SAMSUNG TECH.（5） UNIV SUNGKYU.（4）
HANWHA AEROS.（3） TOKYO ELECTR.（3） UNIV SUNGKYU.（3） CALIFORNIA I.（2）
HONG B（2） HONG B H（2） LG ELECTRONI.（2） LOCKHEED MAR.（2）
SRC CORP（2） UNIV SUNGKYU.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.

SINITSKII A, TORRES A, LI G

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Treating particles for repairing defects in fullerene or graphene containing nanoparticles involves disaggregating, deagglomerating, exfoliating, cleaning, functionalizing, doping, decorating and/or repairing particles.

BUCKLAND J, WALTERS D

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Thermal treatment apparatus for high quality graphene synthesis, has catalyst metal film where outlet transferred from down direction diversion roller to winding roller are passed through feed roller in deposition chamber.

KIM Y K, YONG K K, KIM Y, KI K Y

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W