国家/地区 中国（82）
IPC部 C（82）
IPC大类 C23（82）
IPC小类 C23C（82） C01B（20） H01L（12）
B22F（9） C22C（5） H01J（5）
B82Y（4） C22F（4） C25D（4）
C30B（4） H01M（4） A61B（3）
B05D（3） B32B（3） C25F（3）
IPC C23C016/26（82）
发明人 MA Y（9） LI M（5） LI P（4）
LI Y（4） LIU Z（4） WANG X（4）
ZHANG J（4） CHEN Z（3） CHENG Y（3）
HUANG S（3） LI C（3） LI H（3）
LI T（3） LIU Y（3） QI Y（3）
公开年 2021（44） 2022（33） 2023（5）
申请年 2021（82）
专利权人 UNIV PEKING（5） ZHEJIANG CHI.（5） BEIJING GRAP.（4） SHANGHAI XIN.（4）
SUZHOU SHENG.（3） UNIV TIANJIN.（3） BEIJING TECH.（2） CHINA NUCLEA.（2）
CHONGQING XI.（2） LAM RES CORP（2） NINGBO INST .（2） SAMSUNG ELEC.（2）
SONGSHAN LAK.（2） UNIV CHINA E.（2） UNIV DALIAN .（2） UNIV SINGAPO.（2）

Layer-by-layer structure graphene-metal composite material for use in various applications e.g. military fields, has material structure formed by repeatedly arranging graphene-metal structure according to tightly stacking technique.

ZHANG Y

Preparation method of in-situ packaged two-dimensional material in e.g. electronics field, involves forming first material layer by cleavage of first material on substrate, and forming second material layer between first layer and substrate.

GAO H, YANG H, BIAN C

Composite material used as positive electrode material for lithium-sulfur battery, comprises reduced graphene oxide-carbon nanotube hybrid material, cobalt carbide particles and sulfur particles loaded on hybrid material.

YAN C, YANG M, WANG N

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Preparing copper rare earth graphene electrical contact material comprises e.g. mixing copper rare earth alloy powder and silicon powder to obtain mixed powder, carrying out chemical vapor deposition, separating silicon powder in mixed powder, sintering, extruding and drawing preform.

CAO H, MA Y

Preparing metal-based graphene composite material, comprises mixing graphene slurry and metal powder to form mixed slurry, and forming mixed slurry into metal-based graphene composite material by chemical vapor deposition in oxygen-free environment.

QIAN T, CAO H, SHEN H, LV X, MA Y

Mechanical hand for film continuous graphene film continuous scale deposition device, has screw rod whose end is installed on driving device, and push rod slidably mounted on screw rod along length direction of screw rod.

XIE S

Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.

SHEN H, MA Y

Preparing copper-based graphene useful for preparing copper-based graphene conductor of electric wire cable, comprises performing surface cleaning and drying on copper material, stacking with high temperature resistant substrate, annealing, and growing graphene layer on copper material surface.

FU J, YANG J, SHEN H, ZHANG W, MA Y

Cathode active material e.g. for lithium secondary battery, comprises e.g. silicon-containing coating layer formed inside pores or on surfaces of carbon-based particles, and carbon coating layer formed on silicon-containing coating layer.

PARK G O, YOO S K, JANGDONGIL, CHUNG J H, JANG D I, ZHENG Z, ZHANG D, YU S, PARK G