国家/地区 中国（19） 韩国（9） 美国（9） 世界知识产权组织（5） 日本（3） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 C（28） H（11） G（4）
B（3）
IPC大类 C23（28）
IPC小类 C23C（28） H01L（10） C01B（5）
H01J（3） B01J（2） B82Y（2）
C08L（2） C09K（2） C30B（2）
IPC C23C016/455（28）
发明人 XIA Y（3） ZHUO E（3） AHN W（2）
AHN W S（2） KIM H（2） KIM H S（2）
LIU B（2） PARK T J（2） ZHANG J（2）
公开年 2021（17） 2020（6） 2022（5）
申请年 2020（28）
专利权人 BEIHAI HUIKE.（3） HKC CO LTD（3） BEIJING GRAP.（2） SAMSUNG ELEC.（2）
UNIV SUNGKYU.（2）

Method for growing graphene wafer, involves depositing and growing graphene wafer on sapphire or metal substrate by vapor deposition, and arranging sheet above metal substrate, and sheet is parallel to plane of metal substrate.

WANG Y, TANG J, YAN R, DU Y

New platinum-containing compound useful in precursor composition for producing platinum-containing thin film.

CHANG K, SHIN H S, PARK T J, KWON S H

Forming carbon-based foam with silica particles doped with boron-10 aluminum oxide (B10-Al-O) mixed in its, comprises e.g. depositing B10-Al-O compound using atomic layer deposition on silica particles in open mesh basket in vacuum chamber.

DWIVEDI V

Manufacturing optical element, by assembling set of nanoscale building blocks into configuration or scaffold structure having predefined arrangement, and depositing, using atomic layer deposition, material into assembled configuration.

JAISWAL S

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L

Chemical vapor deposition device for preparing graphene film, has vacuum monitoring unit for controlling and detecting vacuum degree of reaction unit, and carbon source feeding unit comprising atomizer and vaporizer.

GAO X, SHAN J, LIU B, ZHENG K, GU W

Two-dimensional material forming apparatus comprises substrate moving unit, and two-dimensional material forming unit for forming two-dimensional material by spraying carbon gas on substrate moved by substrate moving unit.

SHIN U C

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Masking block used e.g. to form pattern comprises base substrate, gamma-alumina thin film disposed on base substrate, and hexagonal boron nitride thin film doped with carbon and oxygen and disposed on gamma-alumina thin film.

LEE D, PARK J, PARKJAEHYUN, LEE D J