国家/地区 中国（6） 美国（4） 世界知识产权组织（3）
IPC部 C（7） H（4） B（3）
IPC大类 C23（7）
IPC小类 C23C（7） C01B（5） H01L（4）
B32B（2） B82Y（2）
IPC C23C016/26（7）
发明人 DENG P（2） GUO H（2） LEI T（2）
ZHANG K（2） ZHANG Y（2）
公开年 2012（5） 2013（2）
申请年 2012（7）
专利权人 UNIV XIDIAN（3） DENG P（2） GUO H（2） LEI T（2）
ZHANG K（2） ZHANG Y（2）

Graphene sheet useful in a transparent electrode, a solar cell, a conductive thin film, a display device, a hydrogen storage medium and an electrical device, comprises intercalation compound comprising organic compound, and graphene layers.

CHOI J

Annealing sapphire substrate used for transfer of graphene, by introducing hydrogen, argon and methane gases into copper foil, soaking in ferric pernitrate and acetone, and rinsing with ethanol and deionized water, passing into argon gas.

WANG D, CHAI Z, NING J, ZHANG J, HAN D, HAO Y, YAN Y

Graphene continuous production device has annealing system, chemical vapor-phase deposition system and graphene fast cooling system integrated in vacuum chamber.

XU Z

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene transparent thin film involves carrying out chemical vapor deposition of graphene film on substrate, coating polymethylmethacrylate or photoresist, and electrolyzing and separating film.

CHEN G, KONG D, LIANG Q, MEI J

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y