国家/地区 美国（28） 世界知识产权组织（18） 中国（16） 韩国（12） 欧洲专利局（EPO）（11） 日本（6） 台湾（5） 德国（3） 香港（3） 新加坡（3） 英国（2） 土耳其（2）
IPC部 B（29）
IPC大类 C01（29）
IPC小类 C01B（29）
IPC C01B031/04（29）
发明人 CHOI J（2） GUO S（2） OZKAN C S（2）
OZKAN M（2） SHIN H（2）
公开年 2014（12） 2013（11） 2015（6）
申请年 2013（29）
专利权人 SAMSUNG ELEC.（3） UNIV CALIFOR.（3） UNIV SINGAPO.（2） UNIV SUNGKYU.（2）

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Producing patterned graphene comprises irradiating focal point on metal substrate surface with laser beam in the presence of carbon dioxide and moving the beam relative to surface so that focal point is displaced along the pattern.

ZHAO C, DONG J, DONG X, QIAN X

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Fabrication method for three-dimensional graphene nanoribbon involves removing strip of graphene layer and metal coating to expose side surface of insert while leaving line of graphene on metal winding around insert.

WILLIAMS D, SCHWARTZ R

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Transferring graphene layer, comprises executing electrostatic process to surface of substrate, electrostatically adsorbing graphene layer formed on metal carrier layer onto substrate, and immersing substrate into etching solution.

CHEN C, WANG D, HUANG I, CHEN C W, CHEN C C, WANG D Y, HUANG I S

Nanosynthesis apparatus, useful for nanosynthesizing graphene, comprises outer tube having internal surface, inner tube partially disposed within outer tube, deposition fluid source in fluid communication with gap, and heater.

HART A J, POLSEN E

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K