国家/地区 日本（38）
IPC部 B（38）
IPC大类 C01（38）
IPC小类 C01B（38）
IPC C01B032/186（38）
发明人 CHIBA G（3） CHIBA Y（3） IFUKU R（3）
MATSUMOTO T（3） CHOI K（2） DATSKOS P G（2）
HEIGHT M（2） HONG B H（2） HWANG C（2）
IVANOV I N（2） JOHNSON B Y（2） LEE Y（2）
LIU Z（2） MAZUMDER P（2） PARK H（2）
公开年 2017（6） 2012（5） 2013（5） 2015（4） 2016（4） 2018（4） 2011（2） 2021（2）
申请年 2013（5）  2017（5）  2012（4）  2014（4）  2015（4）  2016（4）  2010（3）  2019（3）  2011（2） 
专利权人 JX NIPPON MI.（3） NIPPON MININ.（3） NIPPON MININ.（3） TOKYO ELECTR.（3）
CORNING INC（2） GRAPHENE SQU.（2） HEIQ MATERIA.（2） SAMSUNG ELEC.（2）
SHANGHAI INS.（2） UNIV CALIFOR.（2） UNIV SUNGKYU.（2） UTBATTELLE L.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Producing graphene film by immersing graphene film and resin layer in laminate made of graphene film arranged on base material and resin layer arranged on graphene film in non-polar solvent and immersing in solution for removing resin layer.

OKIKAWA Y, YAMADA T, HASEGAWA M

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X