国家/地区 中国（11） 美国（11） 世界知识产权组织（9） 韩国（6） 日本（5） 欧洲专利局（EPO）（4） 英国（2） 新加坡（2） 台湾（2）
IPC部 C（15）
IPC大类 C23（15）
IPC小类 C23C（15） C01B（8） B82Y（5）
H01L（5） C30B（3） B01J（2）
IPC C23C016/02（15）
发明人
公开年 2013（9） 2014（4） 2015（2）
申请年 2013（15）
专利权人

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Preparation of graphene nanobelt involves immersing long strip of carbon nanowalls, lead plate and mercury/mercury sulfate in ionic liquid in electrolytic cell, applying voltage, filtering resultant product and vacuum drying.

WANG Y, YUAN X, ZHONG H, ZHOU M

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Manufacture of nickel metal film-coated N-type doped silicon nitride growth controllable graphene material involves growing nickel metal film on composite substrate obtained from silicon nitride, and chemical vapor depositing.

FENG Z, LI J, LIU Q, WEI C, HE Z

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Producing graphene used in graphene-copper composite, involves providing copper substrate including first copper layer in contact with second copper layer and growing graphene monolayer on second copper layer by chemical vapor deposition.

ROBINSON J, YAGER T A

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, by subjecting sample to ex situ functionalization step, and subjecting sample having hydroxide terminated surface to in situ treatment.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A