国家/地区 中国（47） 美国（5） 世界知识产权组织（2）
IPC部 C（49）
IPC大类 C23（49）
IPC小类 C23C（49） H01L（10） C22C（7）
B82Y（5） C01B（5） C30B（4）
B22F（3） C09D（3） H01M（3）
H05K（3） A61B（2） B01J（2）
B05D（2） C22F（2） C25D（2）
IPC C23C014/35（49）
发明人 JIA J（3） LIU M（3） ZHANG J（3）
CAO T（2） CAO Y（2） CHANG K（2）
CHEN H（2） CHEN K（2） CHEN W（2）
CHEN Y（2） CHENG C（2） DU Y（2）
FU Z（2） JIN Z（2） KANG J（2）
公开年 2021（30） 2022（17） 2023（2）
申请年 2021（49）
专利权人 FOSHAN CATEC.（2） LANZHOU CHEM.（2） UNIV CHINA G.（2） UNIV CHINA G.（2）
UNIV DALIAN .（2） UNIV HENAN（2） UNIV SHANGHA.（2） UNIV XIAN JI.（2）

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Preparing a metal wafer substrate involves forming metal thin film on the sapphire substrate by magnetron sputtering, and annealing under mixed atmosphere of hydrogen and argon.

PENG H, YANG Y, CAO Y, TANG J, YAN R, DU Y

Formation of material film used in electronic device, by forming material film on partial region of substrate using sputtering process, removing non-photosensitive mask from substrate, and heat-treating substrate and material film.

JUNG J, KIM T, ZHAO P, SHIN M, SHIN H, SEOL M, KIM S, BYUN K, BYUN K E, KIM S W, SHIN H J, SHIN M S, JOVIN, KIM T H, JUNG J H

Preparing antistatic clamp involves placing plastic fixture in vacuum coating machine, using metal alloy as target, performing magnetron sputtering on plastic fixture to obtain alloy coating layer on plastic fixture, where metal alloy includes aluminum, chromium, copper, silver, nickel, and titanium.

JIN Z

Functional coating material for e.g. fuel cell, comprises corrosion resistant layer, hydrophobic layer, and conductive part exposed from hydrophobic layer.

FU Y, WEI K, HAN Z

Diode for semiconductors, has heterojunction device with vertical structure, which is indium tin oxide substrate, gallium oxide film, graphene film and aluminum electrode layer, from bottom to top.

XIANG J, JIA M, HAN T, TANG L

Low temperature sputtered graphene transparent electrode thin film used in solar cell comprises soda-lime glass substrate plated with molybdenum thin film, photovoltaic copper-zinc-tin-selenium film layer, and p-n junction thin film.

MA J

Intermediate frequency magnetic control sputtering power supply with high-efficiency radiating structure, has mounting frame whose inner side is provided with insulating block and two ends of mounting frame is connected with telescopic rod.

LV S, CUI S, PAN G, KANG K, LIANG Y, LV Z

Preparing petal-shaped graphene field emission cold cathode, comprises selecting and cleaning substrate, selecting silicon sheet and copper foil copper foil as substrate, and growing layer of copper film on substrate surface.

ZHANG X, LEI W, ZHAO Z, ZHAO N

Preparing graphene by relatively closed area solid-phase process, comprises successively or simultaneously depositing carbon source layer and catalytic metal layer on surface of clean substrate to obtain graphene preparation precursor, and heat annealing in oxygen-free or low-oxygen environment.

DUAN J, DENG L, LV T, WU H, ZHANG W, XIONG W