国家/地区 中国（14） 美国（7） 韩国（5） 世界知识产权组织（4） 日本（3） 德国（2） 欧洲专利局（EPO）（2）
IPC部 C（23）
IPC大类 C23（23）
IPC小类 C23C（23） C01B（7） H01L（5）
B82Y（4） H01J（3） C22C（2）
H01H（2） H05H（2）
IPC C23C016/44（23）
发明人 CAO H（3） LV X（3） MA Y（3）
NAGEL C J（3） SHEN H（3） BRODEUR C L（2）
CONRAN B R（2） IFUKU R（2） MATSUMOTO T（2）
MCALEESE C（2） QIAN T（2） SUGIURA M（2）
TEO K B K（2） UEDA H（2） WADA M（2）
公开年 2021（10） 2022（9） 2020（4）
申请年 2020（23）
专利权人 QUANTUM ELEM.（3） SHANGHAI XIN.（3） ZHEJIANG CHI.（3） AIXTRON SE（2）
TOKYO ELECTR.（2）

Depositing thin film, comprises preparing mixture of cyclohexanone and graphene oxide, supplying the mixture into chamber, and depositing thin film using plasma enhanced chemical vapor deposition by providing radio frequency power.

YOON S Y, YOOK J, JAI L H, SHIM W P

Forming carbon-based foam with silica particles doped with boron-10 aluminum oxide (B10-Al-O) mixed in its, comprises e.g. depositing B10-Al-O compound using atomic layer deposition on silica particles in open mesh basket in vacuum chamber.

DWIVEDI V

Deposition of two-dimensional layers on substrate in process chamber, involves heating substrate, feeding reactive gas of carbon-containing chalcogenide, and adjusting substrate temperature, process chamber pressure, and partial pressure of reactive gas so that graphene is deposited as layer.

MCALEESE C, CONRAN B R, TEO K B K

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Deposition of two-dimensional layer on substrate in process chamber of chemical vapor deposition reactor, involves feeding one or more reactive gases into a process chamber and depositing spaced apart crystalline regions on surface of substrate under specific process parameters.

MCALEESE C, CONRAN B R, TEO K B K

Growing graphene film on surface of copper powder, by heating copper powder or its mixture in chemical vapor deposition furnace to oxidation temperature, pre-oxidizing copper powder, continuously heating furnace to growth temperature, reducing surface of copper powder, growing graphene, and cooling.

CAO H, LV X, SHEN H, YANG J, MA Y

Method for preparing metal-based graphene composite material, involves growing graphene film on surface of metal powder by chemical vapor deposition in oxygen-free and preset environment to form a metal-based graphene composite material using mixed powder.

QIAN T, CAO H, SHEN H, LV X, MA Y

Method for preparing graphene-reinforced copper chromium electric contact material, involves cold pressing second mixed powder and sintered to obtain preform, and re-pressing and re-firing preform to obtain electrical contact material.

LV X, SHEN H, QIAN T, CAO H, MA Y

Structure super-sliding device useful e.g. for manufacturing industry, has super-sliding sheet whose edge is warped along opposite direction of super-sliding surface.

ZHENG Q, XIANG X

Performing quantum printing metal within nanoporous carbon powder involves adding nanoporous carbon powder into reactor assembly (RA) comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon powder.

NAGEL C J