国家/地区 美国（27）
IPC部 C（27）
IPC大类 C23（27）
IPC小类 C23C（27） H01L（13） C01B（11）
H01G（4） H01M（4） C09D（3）
B05D（2） B23K（2） B32B（2）
B82Y（2） C25D（2）
IPC C23C016/26（15） C23C016/02（9） H01L021/02（8）
H01L021/285（7） C01B032/186（6） H01L021/768（6）
C23C016/44（4） C23C016/455（4） H01L023/532（4）
C23C016/511（3） C23C016/56（3） H01M004/36（3）
H01M010/0525（3） B82Y030/00（2） B82Y040/00（2）
发明人 LEE C S（4） BYUN K（3） BYUN K E（3）
LEE C（3） AHN S J（2） AN S（2）
ELSAYED K A M（2） IFUKU R（2） KIM D W（2）
KIM K（2） KIM Y（2） LANNING B（2）
LEE J（2） MAAROUF A A（2） MATSUMOTO T（2）
公开年 2023（27）
申请年 2022（27）
专利权人 SAMSUNG ELEC.（7） APPLIED MATE.（2） LYTEN INC（2） TOKYO ELECTR.（2）
UNIV IMAM AB.（2）

Forming graphene involves pretreating surface for processing using one or more pretreating flowrates of substrate gas scavenging gas composition or annealing gas composition, in presence of one or more pretreating temperatures, to produce contaminant-depleted surface.

PHILPOTT R, BARAKET M, SHERRILL V

Anode active material comprises carbon material, and silicon structure attached to carbon material, where silicon structure includes silicon nanoparticle, metal thin film formed on surface of silicon nanoparticle, and graphene coated on surface of metal thin film.

KIM Y H, SON M W, KIM Y, SUN M

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Material layer for, e.g. aero-engine applications, comprises porous synthesized carbon-containing composite materials, bonding layer, and hydraulically smooth surface interfacial layer comprising synthesized carbon-containing composite material(s).

STOWELL M, LANNING B

Composition of matter includes one or more particles, where each particle independently comprises metal lattice having one or more coherent, and planar layers of graphene provided in the metal lattice.

LANNING B, JACOBSON D, SIENKO L, STOWELL M

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Depositing nanoscale-thin film in preselected area on substrate for area-selective atomic layer deposition based on electron beam patterning of chemical functional groups, involves depositing layer of functionalizing molecule onto or adjacent to first surface of substrate.

YOUNG M J, MASCHMANN M R

Metal particles used in adhesive paste or solder paste for composite bonding structure for semiconductor device, comprises core including metal and shell on surface of core, where shell comprises metal and nanoparticles.

CHU K, LEE J, JUNGHOON L, CHU K M

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Producing food packaging barrier film used for consumers to clearly see content of packaged goods, involves providing base film, depositing inorganic laminated film on surface of base film, where inorganic laminated film includes at least one first and second inorganic material deposition layer.

CHEN C, TSAO C, LIAO T, LIAO T C, TSAO C C, CHEN C H, CHEN Z, CAO J, LIAO D