国家/地区 美国（18） 世界知识产权组织（13） 中国（12） 欧洲专利局（EPO）（9） 韩国（9） 日本（5） 德国（3） 香港（3） 英国（2） 新加坡（2） 土耳其（2） 台湾（2）
IPC部 B（20）
IPC大类 B82（20）
IPC小类 B82Y（20）
IPC B82Y040/00（20）
发明人 GUO S（2） OZKAN C S（2） OZKAN M（2）
公开年 2013（10） 2014（7） 2015（3）
申请年 2013（20）
专利权人 UNIV CALIFOR.（3） SAMSUNG ELEC.（2）

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J

Nanosynthesis apparatus, useful for nanosynthesizing graphene, comprises outer tube having internal surface, inner tube partially disposed within outer tube, deposition fluid source in fluid communication with gap, and heater.

HART A J, POLSEN E

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Making graphene monolayer on insulating substrates comprises applying thermal release adhesive tape to bottom graphene layer deposited at bottom of metal foil in chemical vapor deposition graphene synthesis and detaching adhesive tape.

ZURUTUZA E A, CENTENO P A, ALONSO R B, PESQUERA R A, ALONSO RODRIGUEZ B, CENTENO PEREZ A, ZURUTUZA ELORZA A, PESQUERA RODRIGUEZ A, AMAIA Z E, ALBA C P, BEATRIZ A R, AMAIA P R