国家/地区 日本（16） 美国（12） 世界知识产权组织（11） 韩国（10） 中国（8） 欧洲专利局（EPO）（6） 台湾（3）
IPC部 C（18）
IPC大类 C01（18）
IPC小类 C01B（18）
IPC C01B032/18（18）
发明人 HOWE W R（2） HUNT J H（2） IFUKU R（2）
LI A W（2） MATSUMOTO T（2）
公开年 2015（7） 2017（4） 2020（2）
申请年 2014（5）  2015（3）  2016（3） 
专利权人 BOEING CO（2） TOKYO ELECTR.（2）

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T

Structure useful in sliding member and connector, comprises structure in which nanocarbon material is arranged on surface of metal.

KAZUOMI S, KAZUHIRO T, YASUHIRO Y, MAYUMI K, RYOTA Y, SATO K, TOKUNAGA K, YUZUHARA Y, KOSAKA M, YUGE R

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Preparing vertical branched graphene used as catalyst support in e.g. electrocatalytic process involves treating pristine vertical graphene with inert plasma in absence of introduced carbon source to develop vertical branched graphene.

HAN Z, TSOUNIS C, AMAL R

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Manufacture of separator used for polymer electrolyte fuel cell, involves forming graphene film on surface of stainless steel in film-forming apparatus at preset temperature by microwave plasma chemical vapor deposition method.

KUMAGAI M, YOSHINO I, UMENO M, UCHIDA H

Method for manufacturing graphene film used in electronic device, involves blowing source gas containing carbon-type gas from nozzle on surface of base material, and carrying out forced diffusion of radical.

SAKAKIDA H, KIM J H

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Production of graphene used in semiconductor applications, involves forming catalyst metal film on substrate, which includes introducing carbons into catalyst metal film, heating catalyst metal film, and cooling catalyst metal film.

NISHIDE D, MATSUMOTO T, IFUKU R

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S