国家/地区 美国（7） 欧洲专利局（EPO）（4） 世界知识产权组织（4） 韩国（3） 中国（2） 德国（2） 英国（2） 日本（2） 台湾（2）
IPC部 B（8）
IPC大类 B82（8）
IPC小类 B82Y（8）
IPC B82Y040/00（8）
发明人
公开年 2013（8）
申请年 2012（3）  2013（3）  2011（2） 
专利权人

Depositing graphene onto a substrate used in polymeric composites, involves transferring solubilized graphene onto the substrate in a liquid medium, where transferring occurs by changing the solubility of graphene in the liquid medium.

PAWLOSKI A R, BENNETT G S, CERNOHOUS J J, KASKE K, SZYMANSKI A E

Composition, useful in an electronic device, spintronic device or optoelectronic device, comprises ordered film of boron nitride containing multiple layers, where the film has a major surface, and a layer of graphene formed on major surface.

KELBER J A

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Forming graphene film (on surface of substrate) used in e.g. lasers, comprises locating carbon source at or in vicinity of surface, controlling ambient conditions, applying temporary change of condition at localized site and controlling.

DONG G

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A