国家/地区 美国（10） 中国（9） 韩国（7） 日本（5） 世界知识产权组织（5） 台湾（3） 德国（2） 欧洲专利局（EPO）（2）
IPC部 C（16）
IPC大类 C01（16）
IPC小类 C01B（16）
IPC C23C016/26（9） C01B032/186（5） H01L021/02（5）
B82Y030/00（4） B82Y040/00（4） C01B032/194（4）
C23C016/02（4） C01B032/05（3） C01B032/182（3）
C01B032/184（3） C23C016/34（3） C23C016/455（3）
C23C016/56（3） H01M004/38（3） H01M004/62（3）
发明人
公开年 2021（16）
申请年 2021（16）
专利权人 TOKYO ELECTR.（2） UNIV SINGAPO.（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Porous silicon-carbon composite material for lithium ion battery, comprises core-shell structure, where inner core is composite of porous carbon, cerium dioxide and graphene component, and shell is doped with oxide compound selected from phosphorus oxide, arsenic oxide and selenium oxide.

CAO J

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Transistor pathogen virus detector for detection of SARS-COV2 virus, comprises substrate layer, silicon dioxide layer, nanocrystalline diamond layer, graphene oxide layer, fluorinated graphene oxide portions, and linker layer.

KOVI K K, SCHIRMANN E, KHAN A

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Transparent electrode for photovoltaic cells, comprises transparent substrate and composite layer including graphene layer and nanoparticles that are embedded in graphene layer and extended through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A