国家/地区 韩国（165）
IPC部 C（165）
IPC大类 C01（165）
IPC小类 C01B（165）
IPC C01B031/02（165）
发明人 HONG B H（16） CHOI J Y（9） JUNG M（9）
WON D K（9） AHN J（8） HONG B（8）
CHOI J（7） SHIN H J（7） AHN J H（6）
CHO S M（6） KIM H K（6） LEE J（6）
MOON J（6） WOO Y S（6） BAE S K（5）
公开年 2013（43） 2012（41） 2011（28） 2014（24） 2015（16） 2016（4） 2010（3） 2009（2） 2017（2）
申请年 2012（47）  2011（44）  2013（25）  2010（20）  2014（11）  2009（6）  2015（6）  2016（3）  2008（2） 
专利权人 SAMSUNG ELEC.（20） SAMSUNG TECH.（19） HANWHA TECHW.（14） UNIV SUNGKYU.（13）
UNIV SUNGKYU.（13） UNIV SUNGKYU.（12） GRAPHENE SQU.（9） KOREA ADVANC.（9）
HANWHA AEROS.（7） KOREA ADV IN.（7） LG ELECTRONI.（7） NIPPON MININ.（6）
JX NIPPON MI.（5） NIPPON MININ.（5） GUARDIAN GLA.（4） GUARDIAN IND（4）
GUARDIAN IND.（4） SRC CORP（4） UNIV SUNGKYU.（4） GWANGJU INST.（3）

Producing thin film graphene oxide-bonded metal foil current collector for battery or supercapacitor, comprises preparing graphene oxide gel, dispensing and depositing layer of gel onto primary surfaces of foil, removing and heat treating.

ZHAMU A, LIN Y, JANG B Z

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Manufacturing graphene, comprises preparing support member, disposing carbon layer and catalyst layer, forming graphene, attaching carrier to graphene and forming graphene-forming structure, separating member and removing catalyst layer.

PARK C, CHO S, PARK C H, CHO S M

Method for manufacturing graphene, involves forming a carbon containing layer on base layer by atomic-layer-deposition method, and amorphous carbon layer from carbon containing layer, and graphene from amorphous carbon layer.

KOJIMA E, KATAYAMA M, KANO K, OONISHI S, ONISHI S

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Manufacturing graphene, comprises manufacturing superimposed body by overlapping the stacked thin film made of a metal catalyst layer; and preparing graphene on a metal catalyst layer by performing a chemical vapor deposition.

CHO K, BONG H

Production of doped graphene pattern during manufacture of pn-diode, involves supplying n-type carbon precursor on substrate, forming amorphous carbon pattern by irradiating electron beam or ion beam to precursor and heat-treating.

BAE D J, KIM K S, LEE I B