国家/地区 美国（39）
IPC部 C（39）
IPC大类 C01（39）
IPC小类 C01B（39）
IPC C23C016/26（21） C01B032/194（16） C01B032/186（15）
C23C016/02（12） C23C016/04（11） B82Y030/00（9）
C23C016/44（9） B82Y040/00（7） C01B032/182（7）
C23C016/505（7） C23C016/56（7） C23C016/52（6）
H01L021/02（6） C23C016/452（5） C23C016/48（5）
发明人 NAGEL C J（4） BRODEUR C L（3） BYUN K（3）
BYUN K E（3） LEE C（3） LEE C S（3）
LEE E（3） SHIN H（3） SHIN H J（3）
GLASS H（2） GUINEY I（2） KIM C（2）
KIM S（2） NARKEVICIUTE I（2） THOMAS S（2）
公开年 2021（39）
申请年 2020（20）  2021（17）  2019（2） 
专利权人 QUANTUM ELEM.（4） SAMSUNG ELEC.（3） LAM RES CORP（2） PARAGRAF LTD（2）
TOKYO ELECTR.（2） UNIV SINGAPO.（2）

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Reactor assembly comprises gas inlet, gas outlets, reactor chamber, porous frits having porosity and comprising nanoporous carbon material, reactor head space, reactor assembly lamps, and computer processing unit.

NAGEL C J, BRODEUR C L

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Transistor pathogen virus detector for detection of SARS-COV2 virus, comprises substrate layer, silicon dioxide layer, nanocrystalline diamond layer, graphene oxide layer, fluorinated graphene oxide portions, and linker layer.

KOVI K K, SCHIRMANN E, KHAN A

Transparent electrode for photovoltaic cells, comprises transparent substrate and composite layer including graphene layer and nanoparticles that are embedded in graphene layer and extended through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Performing quantum printing metal within nanoporous carbon powder involves adding nanoporous carbon powder into reactor assembly (RA) comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon powder.

NAGEL C J