国家/地区 中国（8） 美国（7） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 日本（3） 韩国（3）
IPC部 C（12）
IPC大类 C23（12）
IPC小类 C23F（12）
IPC C01B031/04（5） B32B009/00（4） B32B009/04（3）
B82Y030/00（3） B82Y040/00（3） C01B032/194（3）
C23F001/02（3） H01L021/02（3） H01L029/16（3）
B32B003/00（2） B32B015/04（2） B32B015/20（2）
C01B032/184（2） C01B032/186（2） C23C016/26（2）
发明人 AFZALIARDAKANI A（2） MAAROUF A（2） MARTYNA G J（2）
SAENGER K（2） YANG S（2） ZHANG Z（2）
公开年 2015（7） 2016（4）
申请年 2015（12）
专利权人 EGYPT NANOTE.（2） INT BUSINESS.（2） SHANDONG YIN.（2）

Method for manufacturing large area graphene for graphene-based photonics device e.g. saturable absorber, involves several resist layers from main graphene layer to reveal final graphene layer.

SULTANA M, LI M J, YU A W

Chemically etching graphene-catalyzed silicon, comprises e.g. laminating graphene layer on the silicon layer, forming nano-templates on laminated graphene layer and forming graphene nanostructure with pattern mask.

SUK H C, JUNG K K, CHOI S H, KIM J K

Manufacture of structure-controllable three-dimensional graphene porous material involves preparing porous metal structure, heating, cooling, performing sand blasting, growing graphene film, washing and drying.

SHI Y, YAN C, ZHU W

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Method for manufacturing conductive material in lubricant, involves attaching substrate layer to graphene layer, and providing second conductive material with substrate layer which is attached to graphene layer.

TREOSSI E, SCIDA A, PALERMO V, KHAN M A, SCIDAE A

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Method for manufacturing transparent conductor in electric devices, involves removing copper support by bringing support into contact with non-acidic copper-etching solution after forming transparent resin layer to expose graphene film.

NAITO K, AKASAKA Y, YANG T, YOSHINAGA N, YANG T Y, AKITA M

Closed system corrosion inhibitor comprises methylamino polyepoxy sulfosuccinic acid, graphene oxide aqueous dispersion liquid, maleic acid-acrylic acid copolymer, sodium molybdate, coconut oil fatty acid diethanolamide and zinc sulfate.

YANG S, ZHANG Z

Graphene nanomesh structure for providing carrier mobility for electronic devices, has graphene that is reacted with patterned structure to remove graphene regions of patterned structure of carbide-forming metal or metal-containing alloy.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

B corrosion inhibitor comprises sulfonic acid-polyepoxysuccinic acid, N,N'-diacetyl adipoyl dihydrazide, maleic acid-acrylic acid copolymer, aqueous dispersion of graphene oxide, benzotriazole, and aqueous solution of zinc sulfate.

YANG S, ZHANG Z