国家/地区 美国（38）
IPC部 B（38）
IPC大类 C23（38）
IPC小类 C30B（38）
IPC C23C016/26（24） B82Y040/00（23） C01B031/04（22）
C30B029/02（22） B82Y030/00（19） C01B032/186（16）
C01B031/02（15） C30B025/18（15） C23C016/02（12）
H01L021/02（9） C23C016/56（7） B32B009/00（6）
B82B003/00（6） C01B032/182（6） C01B032/194（6）
发明人 VEERASAMY V S（4） XIE X（4） DING G（3）
VEERASAMY V（3） WANG H（3） CASTRO A H（2）
HONG B H（2） JIANG M（2） LIU X（2）
TANG S（2） XIE H（2） ZHANG K（2）
公开年 2012（7） 2011（5） 2013（5） 2015（4） 2021（4） 2014（3） 2016（3） 2009（2） 2022（2）
申请年 2012（7）  2011（5）  2013（5）  2009（3）  2014（3）  2020（3）  2008（2）  2015（2）  2016（2）  2017（2）  2021（2） 
专利权人 GUARDIAN IND.（4） SHANGHAI INS.（4） GUARDIAN GLA.（3） GUARDIAN IND（3）
CHINESE ACAD.（2） DING G（2） SAMSUNG TECH.（2） UNIV SINGAPO.（2）
XIE X（2） ZHANG K（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M