国家/地区 世界知识产权组织（8）
IPC部 B（8）
IPC大类 B01（8）
IPC小类 B01J（8）
IPC C01B031/02（8） C23C016/26（6） C01B031/04（5）
B82Y030/00（4） B82Y040/00（3） B01J019/08（2）
B01J019/12（2） B01J019/18（2） B01J019/24（2）
B01J023/755（2） C01B003/00（2）
发明人 SONG Y（2） SONG Y I（2）
公开年 2012（8）
申请年 2012（6）  2011（2） 
专利权人 HANWHA TECHW.（3） SAMSUNG TECH.（3） KOREA ADV IN.（2）

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Manufacture of graphene film used for e.g. transparent display, involves forming graphene on catalyst metal film, forming another film on surface of graphene, on which catalyst metal film is not formed, and removing catalyst metal film.

SONG Y, SONG Y I

Apparatus for manufacturing graphene film, has heater that is provided to heat domain of catalyst substrate which is arranged to contact gas gushing out from gas jet unit.

YOON J, HYEOK Y J, YOON J H

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I