国家/地区 中国（18）
IPC部 C（19）
IPC大类 C30（19）
IPC小类 C30B（19）
IPC C30B029/02（15） C30B025/18（10） C30B025/00（4）
C30B029/64（3） C30B001/02（2） C30B025/02（2）
C30B025/08（2）
发明人 XU X（19）
公开年 2016（4） 2015（3） 2017（3） 2022（3）
申请年 2016（6）  2021（3）  2015（2）  2017（2） 
专利权人 UNIV SHANDON.（8） UNIV PEKING（6） SHANDONG BEN.（2）

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Preparing near free state single-layer graphene based on silicon carbide single crystal substrate comprises e.g. pre-processing surface of silicon carbide single crystal substrate wafer, heating pre-processed substrate silicon surface, performing hydrogen etching, and obtaining substrate.

XU X, XIE X, XIAO L, SHAO C, LI X, CHEN X, ZHANG F

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Preparing double-layer single crystal graphene, involves placing carbon-containing compound and copper foil in corundum box, introducing argon and hydrogen, increasing flux of hydrogen, annealing copper foil, introducing methane, after growing double-layer single crystal graphene, naturally cooling.

XU X, LIANG Z, ZENG F, WANG R, TANG Z

New mixed rare earth-transition element doped up-conversion laser crystal, prepared by using mixed crystal of sodium yttrium tetrafluoride and zirconium tetrafluoride, ytterbium(III) ions, erbium(III) ions and graphene quantum dots.

LI D, WANG D, XU X, WANG X, LIU J

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Manufacture of single crystal copper-nickel alloy for preparing multilayer monocrystalline graphene, involves carrying out nickel plating on single crystal copper foil, and annealing to obtain copper single crystal copper foil.

ZHANG Z, XU X, WU M, YU D, WANG E, LIU K

Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing 6H-4H-silicon carbide carbon surface, cleaning and cutting, placing in chemical vapor deposition furnace chamber and filling with argon.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Growing of large-sized monocrystalline graphene on silicon carbide substrate used for microelectronic device, involves polishing silicon carbide substrate, introducing e.g. argon, placing probe on substrate and growing graphene on substrate.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F