国家/地区 中国（5） 美国（2）
IPC部 C（7）
IPC大类 C30（7）
IPC小类 C30B（7）
IPC C30B025/18（7）
发明人
公开年 2017（4） 2018（3）
申请年 2017（7）
专利权人

Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.

GUAN H

Semiconductor structure having multiple-porous graphene layer, includes gallium nitride layer formed on multiple-porous graphene layer which is formed on semiconductor substrate.

LAI C, TAN C, SINGH P, LAI C S

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Graphene-based LED epitaxial growth method, involves depositing silicon-doped n-type gallium nitride layer, active layer, p-type aluminum gallium nitride layer and magnesium-doped gallium nitride layer on substrate, and cooling.

XU P

Preparing graphene single crystal film comprises laminating copper single-crystal thin film/sapphire, annealing and depositing on single-crystal thin film surface under atmospheric pressure chemical vapor deposition.

PENG H, DENG B, LIU Z

Growing of gallium nitride based on atomic layer deposition of aluminum nitride comprises e.g. cleaning copper substrate, growing graphene layer, aluminum nitride thin layer by atomic layer deposition process and post processing.

WANG W, LI Z, LONG H, LI M, ZHANG J

Heteroepitaxial diamond comprises heterogeneous substrate, graphene flexible layer used as flexible intermediate layer for growing diamonds on heterogeneous substrate, and diamond layer which is epitaxially grown on diamond layer.

YU W, JIN P, ZHANG Y, WANG Z