国家/地区 中国（15）
IPC部 C（15）
IPC大类 C30（15）
IPC小类 C30B（15）
IPC C30B029/02（6） C30B025/18（5） C30B029/06（3）
C01B032/194（2） C23C014/24（2） C30B025/00（2）
C30B029/40（2） C30B033/10（2） H01L021/02（2）
发明人 ZHANG J（3） CHI K（2） GUO W（2）
LIU Y（2） WANG S（2） WANG X（2）
WANG Y（2）
公开年 2018（10） 2020（4）
申请年 2018（15）
专利权人 UNIV HUAZHON.（2）

Polymer composite material comprises micro-nano hybrid structure filler, where the composite material comprises graphene nanosheets, magnesium salt whiskers and polymer matrix, where magnesium salt whiskers are magnesium hydroxide whiskers.

XU H, XU W, LIU F, LIU T, LIU Y, LI J

Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate involves selecting single crystal diamond substrate, coating graphene layer on crystal diamond substrate.

REN Z, ZHANG Y, ZHANG J, NING J, HAO Y

Preparing continuous single-layer single-crystal graphene film comprises electrochemically polishing the single crystal copper, then further performing graphene growth on the single crystal copper substrate.

WU B, ZHANG J, LIU Y

Vacuum chamber tunnel furnace and tubular linear gas supply arrangement for production of graphene single crystal film, in which copper-nickel foil moving device moves copper-nickel foil to react with deposition gas to produce graphene film.

WANG Y

Preparation of wafer-level graphene single crystal involves placing plasma-processed metal foil in reaction furnace, heating, introducing hydrogen, annealing, introducing carbon source, adjusting annealing temperature and cooling.

HUANG F, CHENG Y, BI H

Preparing single crystal graphene sheet from papermaking black liquor used in transparent conductive materials, involves performing hydrothermal carbonization of papermaking black liquor, and adjusting reaction conditions.

WANG X, DING Z, WU P, LI F, SUN R

Monocrystalline quartz crucible has main body composed of silicon dioxide layer and anti-oxidation layer, graphene heat conducting plate, side socket, liquid guide opening, single crystal silicon substrate, spline ring, and upper cover.

PANG W

Single crystal gallium nitride film growing involves forming amorphous silicon oxide layer on silicon substrate, transferring single crystal graphene to obtained silicon substrate, and then pretreating single crystal graphene surface.

YANG X, SHEN B, FENG Y, ZHANG Z, LIU K, ZHANG J, XU F, WANG X, TANG N

Preparing graphene chip fly ash comprises washing fly ash is washed by the wet grinding of the vertical wet mill and supergravity washing machine, purifying, recycling, drying, crushing, opening natural gas tank and mixing.

CHENG L, LIU X, YONG X, LIU H

Preparing cadmium zinc telluride film (CdZnTe) by directional growth on a graphene substrate comprises washing copper foil, placing in CVD growth chamber, heating, cooling, polishing, annealing, and immersing.

HUANG J, GU Q, ZHOU X, YANG F, ZOU T, TANG K, HUANG H, WANG L