国家/地区 中国（9） 美国（7） 世界知识产权组织（5） 欧洲专利局（EPO）（2）
IPC部 C（14）
IPC大类 C30（14）
IPC小类 C30B（14）
IPC C30B025/18（14）
发明人 XU X（3） CHEN X（2） RUOFF R S（2）
SUN L（2） TOH C T（2） YU G（2）
ZHAO X（2）
公开年 2015（14）
申请年 2015（6）  2014（5）  2013（3） 
专利权人 UNIV SHANDON.（2） UNIV SINGAPO.（2） UNIV TEXAS S.（2）

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E

Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.

COLOMBO L, RUOFF R S, HAO Y

Nitride epitaxy crystal structure comprises substrate, nitride epitaxy layer, graphene, patterning mask layer, and nitride epitaxy layer.

ZHANG R, ZHOU Y, SUN C

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide substrate used for electronics field by heating substrate with silicon or silicon carbide, decomposing and etching.

CHEN X, SUN L, XU X, ZHAO X

Preparing hierarchical graphene substrate of zinc oxide arrays used for preparing zinc oxide-based ultraviolet photo-detectors, involve carrying out non-hierarchical zinc oxide chemical vapor deposition growth of graphene nanosheet.

LI L, YANG H

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of ordered graphene structure used for multitouch capacitive panel, involves exposing substrate to laser beam in presence of carbon source and moving substrate or laser beam relative to other, or decreasing laser beam power.

OEZYILMAZ B, TOH C T

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Preparation of semiconductor material used for forming semiconductor layer in semiconductor device, involves forming graphene layer on semiconductor, and forming and cleaving metal monolayer and epitaxial layer of gallium material.

BAYRAM C, DIMITRAKOPOULOS C D, FOGEL K E, KIM J, OTT J A, SADANA D K