国家/地区 中国（11） 美国（4） 世界知识产权组织（3） 欧洲专利局（EPO）（2） 韩国（2）
IPC部 C（14）
IPC大类 C30（14）
IPC小类 C30B（14）
IPC C30B025/18（14）
发明人 ZHANG Z（4） XU X（3） LI Y（2）
LIU K（2） ZHANG X（2）
公开年 2016（14）
申请年 2016（9）  2015（3）  2014（2） 
专利权人 UNIV PEKING（3）

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

A method of diamond nucleation comprises,providing substrate and forming graphene layer on surface of the substrate.

TZENG Y, CHANG C, TZENG Y H

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X

Preparation of AB-stacked bilayer graphene involves performing chemical deposition on copper foil using solid or liquid hydrocarbon as carbon source, and controlling volatilization of carbon source using inert carrier gas.

WU J, WAN J, SONG L, PAN D, LI Y

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z

Rapid continuous preparation of large crystal domain graphene thin film by setting metal foil into oxide substrate, and growing on surface.

LIU K, YU D, WANG E, ZHANG Z, XU X