国家/地区 中国（9） 美国（9） 日本（5） 世界知识产权组织（5） 韩国（4） 台湾（4）
IPC部 C（18）
IPC大类 C30（18）
IPC小类 C30B（18）
IPC C30B029/02（10） C01B031/02（9） C01B031/04（7）
C30B025/18（7） H01L021/02（6） B82Y040/00（4）
C23C016/26（4） H01L021/20（4） H01L021/205（4）
H01L029/16（4） B82Y030/00（3） C30B025/02（3）
C30B025/04（3） H01L029/06（3） H01L033/00（3）
发明人 CHAI Z（3） FAN S（3） HAN D（3）
HAO Y（3） NING J（3） WANG D（3）
WEI Y（3） YAN Y（3） ZHANG J（3）
FAN F Y（2） GI Y（2） KELBER J（2）
公开年 2013（18）
申请年 2012（18）
专利权人 HON HAI PREC.（3） HONGFUJIN PR.（3） UNIV TSINGHU.（3） UNIV XIDIAN（3）
KELBER J（2） UNIV NORTH T.（2）

Method for producing graphene layer, involves fixing liquid metal on solid substrate or ceramic metal, fixing outer layer of liquid metal or alloy metals at melting point, and forming multi-layer in graphene forming die.

KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K, MODRZYK W

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Making epitaxial structure which is useful to produce electronics comprises forming patterned epitaxial growth surface of substrate, making graphene layer and epitaxially growing epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S

Low-temperature formation of graphene on surface of silica carbide e.g. used in medical field, involves forming silicon dioxide film on surface of silicon carbide, segregating carbon atom, removing oxidized film and heat treating.

ARIMA K, SANO Y

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Preparation of single-crystal graphene used in field of e.g. effect electronic device, involves heating insulating material in non-oxidizing atmosphere, providing carbon source and hydrogen in reaction system and cooling.

GUO Y, LUO B, CHEN J, WU B, HUANG L, GENG D, LIU Y, XUE Y, YU G