国家/地区 韩国（14） 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 B（14）
IPC大类 B01（14）
IPC小类 B01J（14）
IPC C01B032/182（6） C01B032/184（6） B01J019/18（4）
G03F001/22（4） G03F001/62（4） C01B032/194（3）
B01J004/00（2） B01J019/10（2） B01J019/12（2）
B01J019/24（2） B01J019/28（2） C01B031/02（2）
C01B031/04（2） G03F001/64（2） G03F007/20（2）
发明人 YANG W S（9） KIM H K（5） KIM H Y（4）
MI K H（4） KIM H M（3） KIM S G（3）
CHO J W（2） JEONJUNHYUCK（2） JOJINWOO（2）
KIM B G（2） KIM H（2） KIM S J（2）
KIM S K（2） KIMHYUNGKEUN（2） KIMSUNJOO（2）
公开年 2018（4） 2015（2） 2021（2） 2022（2） 2023（2）
申请年 2016（6）  2021（3）  2014（2）  2020（2） 
专利权人 KOREA ELECTRONICS TECHNOLOGY INST（14）

Graphene manufacturing apparatus comprises supply unit, moving unit, laser irradiation unit, and collecting unit connected to other side of moving unit to separate and collect graphene powder from graphite oxide powder or graphene oxide powder.

YANG W S, KIM S J, KIMSUNJOO, LEE J G, PARK H, PARK J, KIM B G

Manufacturing graphene comprises disposing graphite oxide powder or graphene oxide powder in laser irradiation area, irradiating laser to graphite oxide powder or graphene oxide powder and recovering graphene powder generated by irradiation.

YANG W S, KIMSUNJOO, LEE J G, PARK H, PARK J, KIM B G, KIM S J

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Preparing pellicle for extreme UV exposure with graphene defect healing layer, involves forming support layer of silicon nitride material on silicon substrate, and forming core layer of graphene material on support layer.

KIMHYUNGKEUN, MI K H, LEE W S, YANG H S, JOJINWOO, KIM B, JEONJUNHYUCK, LEE G H, KIM H Y, JEON J H, KIM S G, CHO J W, KIM H M, KIM H K

Directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography, involves forming small-layer graphene on SiN substrate, forming metal catalyst layer on small-layer graphene, and forming an amorphous carbon layer.

KIMHYUNGKEUN, MI K H, KIM H Y, LEE G H, SUNG K H, KIM H M, KIM S G, KIM H K

Producing high purity highly crystalline reduction graphene oxidation of silicon comprises graphite oxidation step of injecting and oxidizing graphite in Kuett-Taylor reactor, forming oxide graphene.

YANG W S

Preparing oxidized graphene, comprises injecting and oxidizing graphite in Couette-Taylor reactor, and converting oxidized graphite into graphene oxide by introducing oxidized graphite in Couette-Taylor reactor to peel off oxidized graphene.

YANG W S

Drying graphene oxide, comprises treating a washed graphene oxide with an organic solvent, and thermally drying the graphene grains.

YANG W S

Washing oxide graphene in washing device, involves separating unreacted sulfuric acid from oxide graphene slurry and washing above-mentioned separated oxide graphene by using aqueous solution.

YANG W S