国家/地区 欧洲专利局（EPO）（8）
IPC部 B（8）
IPC大类 B01（8）
IPC小类 B01J（8）
IPC C01B032/186（8）
发明人 SHIN H（2） SHIN H J（2）
公开年
申请年 2010（2） 
专利权人 SAMSUNG ELEC.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z