国家/地区 中国（15）
IPC部 B（15）
IPC大类 B32（15） C01（15） B82（5）
H01（5） C08（3） C09（3）
C23（3） B65（2）
IPC小类 B32B（15）
IPC C01B031/04（15）
发明人 JOHNSON B Y（2） MAZUMDER P（2） SONI K K（2）
公开年 2016（15）
申请年 2015（7）  2016（7） 
专利权人 CORNING INC（2）

Preparing nitrogen-doped graphene, used to produce composite heat dispatching plate, comprises mixing solid-state nitrogen containing precursor with a graphene to form a mixture, and sintering the mixture under reducing atmosphere.

LIU W J, SHEN J, XIE Z Z, LIU W, XIE Z

Preparation of low-resistance graphene film by corona process involves performing corona treatment of target substrate and laminating film to graphene on graphene-grown metal substrate to obtain film/graphene/metal substrate structure.

WANG X, WANG W, TAN H

Preparing graphene composite film comprises e.g. dividing graphite powder into two equal portions, adding into first organic and second organic solvent solution, subjecting into sonication, carrying out heating and carbonizing treatment.

LI S

Graphene laminate used in electrode for electronic device chosen from e.g. organic thin-film transistor and organic solar cell, comprises graphene layer comprising electron-donating functional group, and another graphene layer.

CHO K, KIM H, KANG B S, GANG B, KANG B

Graphene compound for barrier element and clear packaging for product comprises optionally functionalized graphene directly bonded to nitrogen-containing compound.

ZHENG S

Forming a graphene device, used to form sensor device, comprises forming a graphene film over a substrate, depositing a polymer material covering a surface of the film, by gas phase deposition, and removing the substrate from the film.

KALITA D, BOUCHIAT V, MARTY L, BENDIAB N

Production of graphene hybrid material for electronic devices e.g. microsupercapacitor, involves exposing precursor material and associating pseudocapacitive material with laser-induced graphene which is derived from precursor material.

TOUR J M, LI L, PENG Z, ZHANG J, TOUR J

Article useful for delaminating graphene layer from growth substrate, comprises graphene layer on growth substrate and polarized ferroelectric polymer layer on the graphene layer.

OZYILMAZ B, MARTIN FERNANDEZ I, TOH C T, MARTIN F I, AZYILMAZ B

Graphene heat sink comprises a heat dissipation layer and a substrate, where the substrate is provided with a first surface having two-dimensional or three-dimensional structure.

BAI D

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K