国家/地区 美国（13） 韩国（11） 世界知识产权组织（11） 中国（10） 日本（10） 欧洲专利局（EPO）（9） 台湾（4） 德国（2） 英国（2）
IPC部 B（19）
IPC大类 B32（19） C23（19） C01（14）
H01（10） B82（9） B05（6）
C30（6） B01（2） C21（2）
H05（2）
IPC小类 B32B（19）
IPC C23C016/02（19）
发明人 CHOI J（2） DATSKOS P G（2） IVANOV I N（2）
SHIN H（2） SHIN H J（2） VLASSIOUK I V（2）
YANG J（2） YANG J H（2）
公开年 2013（3） 2009（2） 2011（2） 2012（2） 2015（2） 2018（2） 2021（2）
申请年 2011（3）  2008（2）  2012（2）  2014（2）  2015（2）  2016（2）  2020（2） 
专利权人 SAMSUNG ELEC.（2） UTBATTELLE L.（2）

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Protective layer for use in display screen, has layer main body provided with sapphire substrate, where graphene film is coated on sapphire substrate.

XIAO D

Manufacture of graphene barrier film for e.g. electronic device, involves forming graphene precursor layer on catalyst layer, forming graphene layer and protective layer, removing catalyst layer and providing graphene layer to substrate.

KIM M J, SEO T H, LEE S, KIM S M, AHN S, BAE S, SON D I

A method of diamond nucleation comprises,providing substrate and forming graphene layer on surface of the substrate.

TZENG Y, CHANG C, TZENG Y H

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Method of preparing graphene layers on metallic substrate for e.g. paint, involves annealing metallic substrate at initial temperature, cooling for graphene growth and contacting carbon vapor with substrate at final temperature.

YIN Z, DU Z, ZHANG H, ZHU M

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E