国家/地区 美国（20） 韩国（16） 欧洲专利局（EPO）（4） 中国（3） 日本（2） 世界知识产权组织（2）
IPC部 B（20）
IPC大类 B32（20）
IPC小类 B32B（20）
IPC B82Y030/00（14） B82Y040/00（13） C01B031/04（13）
C01B031/02（11） B32B009/00（9） H01B001/04（7）
B05D003/02（4） C23C016/26（4） H01L029/16（4）
B01J021/18（3） B32B009/04（3） B32B015/04（3）
B44C001/22（3） C01B031/00（3） C01B032/184（3）
发明人 SHIN H（20）
公开年 2009（6） 2012（6） 2011（5） 2014（2）
申请年 2008（6）  2011（5）  2010（3）  2012（3） 
专利权人 SAMSUNG ELEC.（20） UNIV SUNGKYU.（6） UNIV SUNGKYU.（5）

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Graphene shell used as e.g. hydrogen storage medium, is obtained by forming graphitized catalyst, forming polymeric coating on graphitized catalyst and heat-treating in inert or reduced atmosphere.

CHOI J, SHIN H J, YOON S, SHIN H

Making graphene laminate used in e.g. LCD, comprises forming graphene on graphitization catalyst film, coating surface of substrate with binder layer composition, contacting composition and graphene, curing composition, and removing film.

SHIN H, CHOI J, HAN G, LEE Y

Preparing graphene-layered structure e.g. epitaxial structure that is useful in e.g. transistor, by implanting nitrogen and oxygen ions on surface of silicon carbide thin film to form ion implantation layer and heat treating the film.

SHIN H, CHOI J, AHN J, SEO J, AHN J R, CHOI J Y, SEO J T, SHIN H J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Preparing a graphene shell, comprises forming graphitizing catalyst in three-dimensional form, forming a coating on the graphitizing catalyst, and heat-treating the coating on the graphitizing catalyst in an inert or reductive atmosphere.

CHOI J, SHIN H, YOON S

Preparing graphene sheet used in e.g. hydrogen storage medium and electrical device, comprises disposing graphitizing catalyst on substrate, disposing polymer on graphitizing catalyst and heat-treating polymer on the graphitizing catalyst.

CHOI J, SHIN H, YOON S

Controlling number of graphene layers to form mono/bilayer graphene, used e.g. in sensor, comprises forming graphene on first surface of first substrate, forming second substrate on second surface of first substrate and irradiating graphene.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Graphene composition, useful in electrical device, preferably e.g. sensor, bipolar junction transistor, field effect transistor and light emitting diode, comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer.

SHIN H, CHOI J, AHN J, JEON C, AHN J R, CHOI J Y, JEON C H, SHIN H J