国家/地区 美国（9） 韩国（5） 日本（4） 中国（3） 台湾（3） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 B（10）
IPC大类 B82（10）
IPC小类 B82B（10）
IPC B82B003/00（10） C01B031/02（8） C23C016/26（8）
B82Y040/00（5） B82Y030/00（4） C01B031/04（3）
B32B009/00（2） B32B009/04（2） B82B001/00（2）
C23C016/46（2） H01B001/04（2） H01L029/16（2）
发明人 FAN F Y（2） FAN S（2） JIANG K（2）
LIN X（2） LIN X Y（2） XIAO L（2）
YOO J B（2）
公开年 2012（10）
申请年 2011（6）  2012（3） 
专利权人 UNIV SUNGKYU.（3） UNIV SUNGKYU.（3） HON HAI PREC.（2） HONGFUJIN PR.（2）
UNIV SUNGKYU.（2） UNIV TSINGHU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Graphene/carbon nanotube composite structure comprises carbon nanotube film structure having carbon nanotubes or nanotube wires and micropores; and graphene film located on a surface of film structure, and covering all of the micropores.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B

Manufacture of porous nanostructure graphene film involves evaporating thin metal on graphene, forming membrane-type metal layer and particle shape metal layer, heat-treating and etching.

BEOM Y J, HYEOK L G, U KIM S, KIM S W, LEE K H, YOO J B

Nanosheet used in applications e.g. superconductors, capacitors comprises silicon carbide layer having first and second surfaces; a first graphene layer formed of specific graphenes; and a second graphene layer formed of specific graphenes.

CHEN K, HU M, KUO C, CHEN L, CHEN K H, HU M S, KUO C C, CHEN L C

Fabricating a three dimensional graphene structure e.g. carbon nanotube, comprises growing graphene on metal catalyst template in certain form, and removing template by dissolving template on which graphene has grown, in etching solvent.

YOO J, PATOLE S P, LEE H, YOO J B, SHASHIKANT P P

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C