国家/地区 中国（36）
IPC部 C（36）
IPC大类 C01（36） B82（10） C23（2）
H01（2）
IPC小类 C01B（36）
IPC C01B031/04（31） B82Y040/00（10） C01B031/02（5）
B82Y030/00（2） C23C016/26（2） H01G009/042（2）
发明人 WANG Y（36）
公开年 2013（20） 2012（10） 2011（6）
申请年 2011（36）
专利权人 HAIYANGWANG .（26） OCEANS KING .（21） SHENZHEN OCE.（14） OCEAN S KING.（8）
KUNMING PHYS.（3） SHENZHEN OCE.（3）

Manufacture of graphene used for automation, involves cleaning substrate containing metal material, drying, placing in reaction chamber, introducing protective gas, reacting, heating, adding graphite oxide powder, reacting and cooling.

WANG Y, YUAN X, ZHOU M

Preparation of graphene involves dissolving graphite oxide in liquid carbon-containing substance, adding obtained suspension solution into atomizer, spraying suspension solution mist into reaction chamber, and reacting.

WANG Y, YUAN X, ZHOU M

Preparation of nitrogen-doped graphene by mixing liquid carbon and nitrogen-containing organic solution or suspension, coating in surface of metal substrate, heating, and cooling.

WANG Y, YUAN X, ZHOU M

Manufacture of graphene used for e.g. transistor, involves adding substrate to reaction chamber, vacuumizing, introducing inert gas, maintaining oxygen-free atmosphere, generating plasma and introducing organic gas and inert gas.

WANG Y, YUAN X, ZHOU M

Preparation of graphene for e.g. field effect transistor involves vacuumizing substrate in reaction chamber under catalytic action, passing inert gas, maintaining oxygen-free atmosphere in chamber, and adjusting filament wire temperature.

WANG Y, YUAN X, ZHOU M

Continuous production of graphene comprises cleaning metal substrate, washing substrate surface, coating with carbonaceous material and heating to carry out pyrolysis under protective gas.

WANG Y, YUAN X, ZHOU M

Production of graphene comprises taking metal substrate, washing, drying, coating substrate surface with catalyst, disposing in reaction chamber, heating with reducing gas, and cooling to room temperature.

WANG Y, YUAN X, ZHOU M

Preparation of doped graphene involves cleaning metal material and drying, subjecting dried substrate in reaction chamber, introducing protective gas, heating, and introducing gaseous carbon-containing and nitrogen-containing materials.

WANG Y, YUAN X, ZHOU M

Continuous production of graphene comprises cleaning metal deposit, disposing in reaction chamber, maintaining protective gas flow, heating, passing through gaseous carbon-containing substance and carrying out catalytic deposition.

WANG Y, YUAN X, ZHOU M

Preparing monolayer graphene oxide solution, comprises oxidizing graphite powder with an oxidant, thermally treating the graphite oxide, mixing graphene oxide with dispersing agent, and subjecting graphene oxide solution to ultrasonic wave.

LIU D, WANG Y, WU F, ZHOU M