国家/地区 中国（64） 世界知识产权组织（10） 美国（8） 日本（6） 韩国（5） 英国（3） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 C（79） B（24） H（22）
G（6）
IPC大类 C01（79） C23（24） H01（20）
B82（7） C22（7） B21（5）
B30（5） C09（5） H05（5）
B01（4） B32（4） C04（4）
G01（4） B22（3） C30（3）
IPC小类 C01B（79）
IPC C01B032/186（79）
发明人 ZHANG Y（11） DUAN Y（10） SHAO L（10）
SHI H（10） LI X（8） HUANG D（7）
LI Z（7） WANG Z（6） XU X（5）
JIANG H（4） JIN H（4） LI J（4）
LI Y（4） LIU Z（4） MA J（4）
公开年 2022（79）
申请年 2022（79）
专利权人 CHINESE ACAD.（10） CHONGQING GR.（10） CHANGZHOU 2D.（5） JIANGSU JIAN.（5）
TOKYO ELECTR.（4） CHANGZHOU SI.（3） PARAGRAF LTD（3） BEIJING GRAP.（2）
FUJIAN MINXI.（2） GUANGDONG MO.（2） UNIV NORTHWE.（2） UNIV SOOCHOW（2）
UNIV XIAMEN（2） UNIV ZHEJIAN.（2）

Two-dimensional microporous graphene for e.g. energy storage materials e.g. electrode active materials, electronic materials e.g. quantum dots, and membranes or films e.g. separator and chemical detector, has preset average pore size, interpore spacing, and standard deviation of interpore spacing.

KIM C, CHOI M, KI C M, KIM C H

Device for producing roll-to-roll graphene film on substrate, has high temperature process chamber which is rotatably connected with at least two pairs of conveying rollers, and provided with driving device for driving two substrates to attach with each other.

JU Y, YI J, WANG D, LU W, WANG W

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Flower spherical graphene material useful for anode pole piece used in sodium-based dual-ion battery, comprises multiple two-dimensional petal-shaped sheet structure, and has three-dimensional channel structure.

DENG B, SHI X, LIU T, ZHANG Y, WANG J, MO R

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Preparation method of composite material graphene, involves regulating pulse current density under oxygen-free atmosphere to make metal substrate return controlling pulse current density to make metal substrate deposited with graphene return and re-crystallize again, growing to form graphene film.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

In-situ preparation method of carbon material comprises adding substrate and metal-based solution in the catalytic zone of a reactor with protective gas and controlling the catalytic reaction process, sending substrate and metal-based solution in the catalytic zone into reaction zone of the reactor.

JI Z, ZHANG T, DONG Q, GAO C, HE Y, CHU D, BAI W

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Continuous mass production of graphene using thermal plasma comprises, generating plasma by injecting, injecting expandable graphite and intercalation graphite, exfoliating graphene by expanding expanded graphite, and drying by hot air.

KYOUNGJEONGBAE, HWAN B J, CHOI S

Preparing vertical oriented graphene by using carbon dioxide and methane as raw material, comprises pre-heating substrate material needing to grow vertical orientation graphene, and introducing mixed gas of carbon dioxide/methane and growing graphene.

CEN K, YAN J, SU M, YANG H, BO Z