国家/地区 日本（41） 世界知识产权组织（14） 美国（9） 台湾（5） 中国（3） 欧洲专利局（EPO）（3） 德国（2） 韩国（2）
IPC部 C（42） H（23） B（17）
G（7）
IPC大类 C01（42） H01（23） B82（10）
C23（9） B32（6） G01（5）
B01（4） C07（2） C30（2）
IPC小类 C01B（42）
IPC C01B031/02（17） C01B032/194（10） B82Y040/00（9）
C01B032/182（9） C01B032/186（8） B82Y030/00（7）
C01B031/04（6） C01B032/15（6） H01B013/00（6）
B32B009/00（5） C01B032/18（5） C23C016/26（5）
C01B032/198（4） H01B001/04（4） H01L021/28（4）
发明人 HASEGAWA M（11） YAMADA T（7） SHIMIZU T（6）
HASEGAWA MASATAKA（5） ISHIHARA M（5） KUBO T（5）
ISHIHARA MASATOU（4） KIRIHARA K（4） MUKODA M（4）
OKIKAWA Y（4） MASATAKA H（3） SATO S（3）
WATANABE J（3） YAMADA TAKATOSHI（3） YAMAGUCHI J（3）
公开年 2021（14） 2014（7） 2016（4） 2022（4） 2015（3） 2017（2） 2018（2） 2023（2）
申请年 2020（9）  2013（6）  2019（6）  2014（4）  2015（4）  2021（4）  2012（3）  2017（2）  2018（2） 
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（42）

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Electrical-connection component for sliding portion of electric contact point, comprises at least one emboss component formed by covering projection material formed by projecting material of surface of base material with nanocarbon material film which is composed of graphene laminated material.

KITANO A, SHIMIZU T, KUBO T

Graphene laminate comprises substrate having insulating surface, intermediate layer located on and in contact with substrate, and graphene film located on intermediate layer and in contact with intermediate layer.

OKIGAWA Y, YAMADA T

N-type composite material used for thermoelectric conversion element, temperature sensor, infrared sensor, field effect transistor, complementary metal oxide semiconductor, or solar cell, comprises amidine compound and/or guanidine compound, and nanocarbon material or nanocarbon material aggregate.

HORIIE S, KIRIHARA K, MUKODA M, WEI Q Y, KATO Y, MONOBE H, SUGINO T

Processing of carbon nanomaterial-containing film in manufacture of electronic device, involves forming resist mask and/or metal mask on film, irradiating film with light in presence of etchant, and removing resist mask and/or metal mask.

ZHANG M F, YANG M, OKAZAKI T, HIDEAKI N, OKIGAWA Y, YAMADA T

Ceramic capacitor used in electronic device, comprises dielectric nanocrystal array layer, lower electrode and upper electrode arranged opposite to each other and inorganic two-dimensional material layer.

ITASAKA H, MIMURA K, LIU Z, KATO K

Single-layer graphene sheet used for chemical sensor comprises deficiency defect and/or reconstruction structure defect of carbon and enolate coupling structure, epoxy bond structure and/or ether bond structure formed in the defect.

KATO R, HASEGAWA M

Thermoelectric conversion element comprises base and pair of thermocouple members provided on base, where one of pair of thermocouple members is N-type doped carbon thin film and other pair is P-type carbon thin film.

KIRIHARA K, MAMORU K, OKIKAWA Y, ISHIHARA S, MUKODA M, HASEGAWA M

Graphene composite used for graphene film for electrical contacts, comprises multilayer graphene layer, and amorphous carbon wall portion made of amorphous carbon, which is fixed to at least portion of side surface of multilayer graphene layer in circumferential direction.

WATANABE J, KUBO T

Apparatus for continuous production of graphene, comprises belt conveyor for moving mounted substrate, reduction unit, non-gas carbon source supply unit, non-gas carbon source heating unit and substrate heating unit.

WATANABE J, SHIMIZU T, KUBO T