国家/地区 中国（9）
IPC部 C（9） B（3） G（2）
H（2）
IPC大类 C01（9） B82（3） C09（2）
C22（2） C23（2） G01（2）
H01（2）
IPC小类 C01B（9）
IPC C01B032/184（9）
发明人 CHEN Z（2） DING G（2） DONG H（2）
LI Y（2） WANG Z（2） XIE X（2）
YANG S（2） YU G（2） ZHANG Y（2）
公开年 2022（3） 2015（2） 2021（2）
申请年 2015（3）  2021（3）  2022（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（9）

Method for improving multi-layer graphene coverage rate on copper-based alloy substrate comprises annealing copper base alloy substrate, introducing carbon source to graphene growth after annealing, realizing multi-layer graphene, quickly cooling to room temperature, ending growth.

CHEN Z, XIAO R, YU G, ZHANG Y

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Preparing magnetic graphene quantum dot for preparing imaging contrast agent and in-vitro diagnostic probe, involves subjecting ferrous ascorbate aqueous solution to hydrothermal reaction, where contrast agent is nuclear magnetic resonance-fluorescence double-mode enhanced imaging contrast agent.

XIE X, DING G, DONG H, YANG S, LI Y

Paramagnetic chiral graphene quantum dot useful for monitoring interaction between chiral molecules, comprises e.g. chiral graphene quantum dots and chelating agent form covalent bond through mutual functional group reaction.

DONG H, LI Y, YANG S, TAO Q, DING G, XIE X

Growing high-entropy alloy nanoparticles on a flexible substrate involves obtaining a flexible substrate, using laser direct writing technology to grow a three-dimensional graphene film with a preset shape on the flexible substrate.

LI M, LI X, XU P, WANG X

Dry transfer of graphene metal substrate comprises placing long graphene metal substrate on target substrate, heating under protective atmosphere at melting temperature or more and cooling to room temperature.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Preparing reversible N-type graphene by forming graphene layer on substrate, placing substrate, on which graphene layer grows, in atomic layer deposition chamber, and increasing concentration of water in water/oxygen molecule pair.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Preparation of wrinkle-free graphene involves subjecting catalytic substrate to ion injection, forming discrete end injection units at catalytic substrate, and heating catalytic substrate in growth chamber.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Transferring graphene to intermediate layer used for preparing graphene electric device, involves mixing polydimethylsiloxane glue with raw substrate, where polydimethylsiloxane glue is solidified into polydimethylsiloxane transition layer.

LI T, LIANG C, WANG W, WANG Y