国家/地区 中国（10）
IPC部 C（11）
IPC大类 C01（11） C23（3）
IPC小类 C01B（11）
IPC C01B031/04（10） C01B032/186（3） C01B031/02（2）
C01B032/184（2） C23C016/26（2）
发明人 DAI J（4） DI Z（4） XUE Z（4）
ZHANG M（4） WANG G（3） WANG Z（3）
ZHENG X（3） CHEN L（2） CHEN Z（2）
JIANG M（2） SUI Y（2） WANG H（2）
XIE X（2） YU G（2） ZHANG D（2）
公开年 2015（11）
申请年 2015（9）  2014（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（11）

Preparation of nanowire and graphene composite material by providing silicon germanium-on-insulator substrate comprising silicon substrate, oxide layer and silicon germanium layer from bottom to top, and etching silicon germanium layer.

DI Z, XUE Z, ZHANG M, YE L, DAI J, WANG Z

Preparing reversible N-type graphene by forming graphene layer on substrate, placing substrate, on which graphene layer grows, in atomic layer deposition chamber, and increasing concentration of water in water/oxygen molecule pair.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.

DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of wrinkle-free graphene involves subjecting catalytic substrate to ion injection, forming discrete end injection units at catalytic substrate, and heating catalytic substrate in growth chamber.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Method for doping sulfur on graphene involves placing graphene in chemical vapor deposition reaction chamber, introducing sulfur source gas to perform sulfur doping on graphene and cooling hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Preparation of textured graphite for, e.g. sensor, involves placing catalytic substrate in growth chamber, introducing carbon source, heating to grow graphene, and cooling in non-oxidizing protective atmosphere to form graphene surface.

DI Z, WANG G, SHI X, XUE Z, ZHANG M, ZHENG X, DAI J

Method for preparing graphene-boron nitride hetero-junction, involves heating and removing heat release adhesive tape to obtain graphene-boron nitride hetero-junction.

CHEN J, LU G, WU T, ZHANG X, WANG H

Improving cleanliness of graphene surface involves completely transferring organic adhesive, and combination of graphene and target substrate into solvent contained in plastic sealed container, and heating container to obtain graphene.

CHEN Z, GE X, XU W, SUI Y, ZHANG H, ZHANG Y, YU G

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Preparing graphene used in transparent electric conduction film and high barrier composite materials, involves mixing graphite and intercalating agent and carrying out oxidation reaction of intercalating agent.

DING G, JIANG M, SUN J, XIE X, TIAN S, DING C