国家/地区 韩国（7）
IPC部 B（7）
IPC大类 B01（7） C01（7） B82（4）
H01（4） C23（2）
IPC小类 B01J（7）
IPC B01J019/12（7）
发明人 YOON Y H（2）
公开年 2014（4） 2013（3）
申请年 2013（7）
专利权人 GRAPHENEALL .（2） SAMSUNG ELEC.（2）

Hydrogen treated graphene surface having specified band gap and hole mobility.

HONG J I, SON J Y, HONG J, SON J, SUN Z

Formation of graphene quantum dot used for e.g. radiator, involves applying microwaves to graphene oxide material, oxidizing reduced graphene oxide product, applying microwaves to graphene oxide product, and processing product.

YOON Y H

Formation of graphene oxide used for e.g. secondary battery, involves oxidizing graphite using acid, recovering acid from primary reaction product, and then oxidizing graphite using recovered acid.

YOON Y H

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Manufacture of graphene quantum dot involves forming carbon source beams by injecting carbon sources into thermal plasma jet, thermally decomposing carbon source, and flowing carbon source beams into tube connected to anode.

SUH J S, KIM J H, KIM J, LEE M W

Processing of graphene used for manufacture of graphene nanoribbons, involves irradiating ion beam to graphene using gas cluster ion beam apparatus, forming cluster and etching.

MATSUMOTO TAKASHI, MATSUMOTO T

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A