国家/地区 美国（8） 世界知识产权组织（8） 中国（6） 韩国（6） 日本（5） 欧洲专利局（EPO）（4） 俄罗斯（4） 台湾（4） 印度（3） 墨西哥（3）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C01B031/02（11）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（5） 2010（4） 2009（2）
申请年 2009（11）
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Manufacture of graphene layer used for electronic circuit, involves mounting molecular beam epitaxy chamber on substrate and forming graphene layers by supplying carbon source on substrate.

SEO D

Manufacture of graphene for, e.g. solar cells, involves providing metallic foil, forming carbon thin film as metal thin film, irradiating laser to carbon film, and cooling mixed layer of carbon and metal formed by laser irradiation.

HUN L B, HWANG H, CHO C

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

Processing of graphene sheet material during manufacture of electronic device, involves inactivating edge portion of graphene sheet material by irradiating material with ultraviolet light in atmosphere containing substance.

ASANO K

In situ preparation of composite film of graphene/carbon nanotube by placing mixture of ferrocene and sulfur in reactor, placing polycrystal nickel pieces, introducing hydrogen/argon mixed gas, heating, and cooling to room temperature.

LI C, LI X, WANG K, WEI J, WU D, ZHU H

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S