国家/地区 韩国（16） 美国（11）
IPC部 C（17）
IPC大类 C01（17） H01（16） B82（6）
C08（3） C09（3） C23（3）
B05（2） B32（2）
IPC小类 C01B（17）
IPC C01B031/04（17）
发明人 LEE S H（5） KIM J H（3） KIM J K（3）
LEE J K（3） LEE S（3） PARK M（3）
BAE S（2） KIM J（2） KIM T W（2）
KIM Y H（2） KOO H Y（2） LEE J（2）
NA S I（2） SON D I（2） SONG Y W（2）
公开年 2017（4） 2012（3） 2015（3） 2016（3） 2010（2）
申请年 2014（4）  2015（4）  2011（3）  2016（3）  2009（2） 
专利权人 KOREA INST SCI TECHNOLOGY（17）

Electrode material used for supercapacitor, comprises cobalt oxide-graphene core-shell quantum dots and does not contain conductive additive.

SON D I, SHIM J H, LEE K S, KO Y H, KOO H Y

Protection film useful for producing organic electronic device, comprises multiple plasma-treated graphene layers, and a non-plasma-treated pure graphene layer deposited on the plasma-treated graphene layer.

BAE S, KIM S J, KIM T W, LEE S H, KIM M J, LEE S K, SEO T H, PARK M

Producing anatase titania-reduced graphene oxide composite as e.g. photocatalyst, comprises e.g. dissolving anatase titania precursor in a solvent to prepare precursor solution, and dispersing graphene oxide to prepare colloidal solution.

KIM J H, NAH I W, OH I H, CHUNG K Y, LEE J K, CHOI W, JUNG H G, OH S H

Manufacturing graphene oxide film used as hole injection layer or precursor transport layer in organic electro-luminescent device, involves preparing graphene oxide dispersion.

KIM J Y, KIM S I, KIM Y H, KIM Y T, KIM C K

Polymer nanomesh used for preparation of graphene nanomesh, has planar structure having cyclized nanomesh-forming polymer and two-dimensional holes arranged on planar structure.

JOH H, SON S Y, LEE S H, KIM T

Producing reduced graphene oxide sheet useful in film t electromagnetic shielding, comprises e.g. preparing graphite oxide by mixing graphite powder and solution containing e.g. strong acid, oxidizing and producing graphene oxide.

KOO C M, HWANG S S, HONG S M, BAEK K Y, KUMAR P, KIM Y H, YANG S J

Non-volatile memory device consists of substrate, lower electrode, active layer containing metal oxide-graphene quantum dots and organic polymer material, and upper electrode, in order.

KIM T W, SON D I, BAE S, LEE S H, MOON B J, LEE D S, PARK M

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Process for forming PN junction in graphene layer through deoxyribonucleic acid (DNA) coating, involves forming DNA lamina molecular having base structure of array in order to absorb on second area of graphene layer.

KIM C, KIM Y J, JUNG Y M, JUN S C, LEE T, LEE S, BYUN Y T, WOO D H, KIM S H, SEO M A, KIM J H, YI J C

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H