国家/地区 美国（13） 日本（11） 韩国（11） 中国（9） 世界知识产权组织（7） 欧洲专利局（EPO）（4） 印度（2）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C01B031/04（17）
发明人 AHN J（2） BAE S（2） BAE S K（2）
CHOI J（2） CHOI J Y（2） CHUNG H（2）
CHUNG H J（2） HEO J（2） HEO J S（2）
HONG B H（2） HUH J（2） HUH J S（2）
JUNG H（2） JUNG H J（2） KANG S（2）
公开年 2011（14） 2010（3）
申请年 2010（17）
专利权人 SAMSUNG ELEC.（4） UNIV SUNGKYU.（4） UNIV SUNGKYU.（3） JAPAN SCI TE.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Manufacture of graphene film involves supplying carbon containing gas to substrate which installed seed graphene crystal and forming graphene film on substrate by chemical vapor deposition process.

FUJII K, SHIMIZU A

Roll-to-roll doping method for large-area graphene area, involves passing graphene film through doping solution that contains dopant or dopant vapor for doping graphene film.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, GANG B S, GEUN K H, HUI H B, HYEON A J

Graphene laminate, useful e.g. in transparent electrode, super-capacitor, fuel cell and solar cell, comprises substrate, binder layer on substrate, and graphene on binder layer, where the graphene is bound to substrate by binder layer.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Graphene preparation involves putting substrate in closed cavity cooled by circulating water, where carrier gas is ventilated and substrate is heated.

LIU Y, HUANG L, WANG T, JI L, CHANG Q, GUO G

Making graphene comprises preparing graphene member comprising e.g. base member, oxide layer and metal catalyst layer, applying water to graphene member, separating metal catalyst layer from oxide layer and removing metal catalyst layer.

AHN J, HONG B, LEE Y, SONG Y, SONG Y I, AHN J H, LEE Y B, HONG B H, LI R

Graphene film for composite complex contains several graphene domains each having specified area.

AGO HIROKI, ITO YOSHITO, TANAKA IZUMI, MIZUNO SEIGI, TSUJI MASAHARU, AGO H, ITO Y, TANAKA I, MIZUNO S, TSUJI M, MIZUNO K

Substrate for fabrication of semiconductor element, has graphene layer formed by chemical vapor deposition using metal catalyst, compound or alloying layer and oxide layer for diffusing metal catalyst sequentially formed on metal layer.

HIURA H, TSUKAGOSHI K