国家/地区 日本（9） 中国（6） 美国（6） 世界知识产权组织（6） 欧洲专利局（EPO）（5） 韩国（5） 新加坡（3） 澳大利亚（2） 加拿大（2）
IPC部 C（17） B（6） H（5）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C01B032/182（17）
发明人 AIDA H（5） AOTA N（5） BEDWORTH P V（2）
HEISE S E（2） SINTON S W（2） SWETT J L（2）
YANG J（2）
公开年 2017（14） 2018（2）
申请年 2016（17）
专利权人 NAMIKI SEIMI.（5） LOCKHEED MAR.（2）

Producing graphene fiber composite useful in electronic device and electric wire, comprises e.g. performing chemical vapor deposition process to synthesize graphene layer on metal catalyst, and etching metal catalyst from graphene layer.

BAE S, KIM S J, RHO H K, LEE S K, KIM T W, LEE D S, LEE S H

Preparation of large size graphene glass involves cleaning large size quartz glass, putting in high temperature tubular furnace, pumping reaction chamber, introducing argon gas and hydrogen gas, and reducing temperature to room temperature.

LIU Z, CHEN X, ZHANG Y

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Manufacture of separator used for polymer electrolyte fuel cell, involves forming graphene film on surface of stainless steel in film-forming apparatus at preset temperature by microwave plasma chemical vapor deposition method.

KUMAGAI M, YOSHINO I, UMENO M, UCHIDA H

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Composite comprises single crystal sapphire substrate having film surface with surface roughness below preset value, metal film grown on film formation surface, and graphene film grown on metal film.

AOTA N, AIDA H

Composite used for electrode, consists of single crystal sapphire substrate having preset surface roughness in surface on opposite side of film-forming surface, metal film grown on film-forming surface of substrate, and graphene film.

AOTA N, AIDA H

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Preparing deposited graphene used as genosensor, comprises heating metal substrate and carbon source in sealed ambient environment, maintaining temperature and time sufficient to form graphene lattice and then cooling substrate.

SEO D H, PINEDA S, HAN Z J, OSTRIKOV K