国家/地区 中国（35） 世界知识产权组织（25） 韩国（13） 美国（13） 日本（11） 台湾（7） 印度（5） 欧洲专利局（EPO）（4） 澳大利亚（2） 加拿大（2） 德国（2） 英国（2） 菲律宾（2）
IPC部 C（64）
IPC大类 C01（64）
IPC小类 C01B（64）
IPC C01B032/182（64）
发明人 LI C（5） LI Z（5） LI S（4）
WU J（4） XIAO D（4） ZHANG Y（4）
LEE E（3） YAMAZAKI S（3） BIANZON P N P（2）
BYUN K（2） CHEN Y（2） CO F D C（2）
HIGO D（2） HUANG H（2） INDIANA H C M（2）
公开年 2022（35） 2021（26） 2023（3）
申请年 2021（64）
专利权人 GUANGZHOU ZH.（4） SEMICONDUCTO.（3） FUJITSU LTD（2） GUANGDONG BR.（2）
GUANGDONG BR.（2） HUNAN BRUNP .（2） PHILIPPINE S.（2） SAMSUNG ELEC.（2）

Method for generating white light using white light-emitting quantum dots, involves mixing naphthalene and heteroatom co-doping compound, fabricating heteroatom co-doped graphene quantum dots from obtained mixture, and generating white light using obtained white-light emitting quantum dots.

SAGAR V K, BISHT P B

Graphene sheet used in e.g. positive electrode and battery, comprises layers of graphene layer, where linear distance of any two points connecting line around graphene sheet is 100-500 nm longest.

ZHONG P, MA J

Controlling stress of amorphous carbon film, comprises depositing first amorphous carbon layer on substrate, and stacking graphene layer on amorphous carbon layer, and depositing second amorphous carbon layer on graphene and carbon layer.

KIM K

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Method for producing graphene electrode with cell structure used in lithium-ion battery involves using plasma sintering technology to solve problem of difficult fusion between graphene sheet, and using nano metal particles to cut and tunnel graphene under plasma atmosphere.

SUN B

Heteroatom doping in graphene by preparing mixture of graphene and doping precursor in solvent, ultrasonically processing mixture, and subjecting dispersed solution to microwave radiation to obtain layers of heteroatom doped graphene.

BHUSHAN R, THAKUR A K, KUMAR P

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Graphene nanoribbon used as channel for electronic device e.g. top gate-type field effect transistor and thin film transistor, is fused cyclic compound.

YAMAGUCHI J, HAYASHI H, YAMADA Y

Manufacturing electronic device precursor e.g. organic LED, involves providing silicon wafer having growth surface, forming insulative layer on growth surface, forming graphene monolayer or multi-layer structure on insulative layer, forming further layers and/or electrical contacts.

BADCOCK T J, KAINTH J, DIXON S, GUINEY I, GRIFFIN R M

Heat dissipation structure for use in electronic device, has heat dissipation module placed on surface of carrier, and including covering heating element, where setting position of module corresponds to heating element.

HE M, HUANG H, HUANG C