国家/地区 美国（16） 世界知识产权组织（15） 欧洲专利局（EPO）（12） 中国（11） 日本（11） 韩国（9） 澳大利亚（2） 加拿大（2） 台湾（2）
IPC部 B（23）
IPC大类 C01（23） B82（20） H01（14）
B32（5） B01（3） C07（3）
C09（3） C25（3） B05（2）
C08（2） C23（2） C30（2）
G01（2）
IPC小类 C01B（23）
IPC C01B032/184（23）
发明人 ABDELKADER A M（2） DRYFE R A W（2） JEFF R A W（2）
KINLOCH I A（2） WEI D（2）
公开年 2014（10） 2013（8） 2015（3） 2017（2）
申请年 2013（23）
专利权人 LG ELECTRONI.（2） UNIV MANCHES.（2）

Preparing graphene material, comprises adding graphene oxide into dispersion medium to obtain suspension of oxidized graphene, spray drying the suspension to obtain graphene granules; and reducing graphene particles by atmosphere reduction.

WANG Y, HONG M

Preparing nanocomposite of graphene and carbon nanotube for transfection of genes, involves heating iron and carbon precursors in gas/vapor chamber, vaporizing precursors and charging vapors containing precursor elements by inert gases.

LANCELOTTI M, DE HOLLANDA L M, ZANIN H, CAETANO MARQUES V E, CORAT E J, DE OLIVEIRA LOBO A

Preparing anthracite based graphene oxide comprises e.g. preparing ultra-clean anthracite powder, adding dispersant, carrying out ultrasonication to prepare dispersion liquid, and preparing graphene oxide colloid solution.

ZHANG L, ZHANG M

Patterning of graphene oxide film used in production of electronic component, involves depositing graphene oxide film on substrate, reducing portion of film, and producing pattern of reduced graphene oxide area in graphene oxide film.

BORINI S, WEI D, WHITE R, BESSONOV A A

Producing in electrochemical cell of one or more of graphene, graphite nanoplatelet structures, and graphane, involves passing current through cell to intercalate ions into graphitic negative electrode.

DRYFE R A W, KINLOCH I A, ABDELKADER A M, JEFF R A W, DRYFE R A V

Manufacture of substrate for electronic apparatus, involves forming silicon carbide layer on silicon substrate, heating upper surface of silicon carbide layer using gas, and forming graphene layer on surface of silicon carbide layer.

SAI J, SUEMITSU M, FUKIDOME H, MAKABE I, NAKABAYASHI T, TATENO Y

Defect repairing method of graphene film e.g. planar crystalline carbon film, involves irradiating laser by giving carbon source to portion identified as defect portion of film, and restoring local defect of film.

OKIKAWA Y, ISHIHARA M, OMURA H, HASEGAWA M

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Graphene for electronic equipment e.g. display device, battery, photoelectric device and solar cell, contains nitrogen-containing organic compound.

NA D H, PARK E S, RYU J C, WON D K, CHEOL R J, NA D, WON D, PARK E, RYU J, YUAN D, YOO J H, LIM Y M, HUH Y

Forming nitrogen and sulfur co-doped graphene quantum dots, comprises heating mixture of carbon source and compound containing nitrogen and sulfur in autoclave.

YU T, DONG Y, LI C M, OTHER I A N T