国家/地区 美国（40）
IPC部 C（40）
IPC大类 C01（40）
IPC小类 C01B（40）
IPC C01B032/184（40）
发明人 CHEN Y（2） CHOI J（2） GLASS H（2）
GUINEY I（2） IFUKU R（2） INGLE N K（2）
MALLICK A B（2） MATSUMOTO T（2） PARK J（2）
PARKJAEHYUN（2） SINGHA R S（2） THOMAS S（2）
TYLER M（2） WALLIS R（2） WANG J（2）
公开年 2017（5） 2018（5） 2022（5） 2013（4） 2021（4） 2016（3） 2011（2） 2012（2） 2014（2） 2019（2） 2020（2） 2023（2）
申请年 2022（6）  2017（5）  2015（4）  2016（4）  2011（3）  2013（3）  2018（3）  2021（3）  2010（2）  2012（2）  2019（2）  2020（2） 
专利权人 KOREA INST S.（3） SAMSUNG ELEC.（3） APPLIED MATE.（2） COMMISSARIAT.（2）
FUJITSU LTD（2） PARAGRAF LTD（2） TOKYO ELECTR.（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Preparing nanoparticles on a substrate for composite, involves depositing micro-sized particles or salt precursors on a substrate, and applying a rapid, high temperature thermal shock to the substrate and the micro-sized particles or the salt precursors.

YAO Y, CHEN Y, HU L

Manufacturing wrinkled graphene comprises immersing polymeric substrate, wrinkled graphene, polystyrene sulfonic acid, or polystyrene substrate in water to remove polystyrene substrate by dissolving polystyrene sulfonic acid substrate.

HONG S, NARUTE P, NARUTEPHRASANT

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Preparing magnetron graphene-based micro-nano motor comprises mixing ferric chloride crystal powder with deionizgraphene-baseded water, immersing in ferric chloride solution, attaching carbon-based microspheres, and pumping out gas in vacuum cavity and continuously introducing oxygen.

CHEN X, HOU M, YAN L, XIE B, GUO Y, CHEN Y

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Method for manufacturing diamond-graphene hybrid thermal management material, involves converting predetermined thickness of partial area of one side or both sides of diamond base material into vertical graphene, where diamond base material serves as heat spreader.

JU H, LEE J K, SU J

Producing polymer-coated graphene layer structure involves e.g. adding substrate to reaction chamber, supplying flow comprising precursor compound to form graphene layer structure, heating and spin-coating using polymer or polymer precursor.

GLASS H, GUINEY I, TYLER M, WALLIS R, THOMAS S, TAYLOR M